AT49F001T-12TI

Product Overview

Category

AT49F001T-12TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The AT49F001T-12TI retains data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It operates at a speed of 120 nanoseconds, allowing for quick data retrieval.
• Low power consumption: The AT49F001T-12TI is designed to minimize power usage.
• Reliable: It offers high endurance and data retention reliability.

Package

The AT49F001T-12TI is available in a 32-pin Thin Small Outline Package (TSOP).

Essence

The essence of this product lies in its ability to provide non-volatile storage for electronic systems, ensuring data integrity and reliability.

Packaging/Quantity

The AT49F001T-12TI is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49F001T-12TI has a total of 32 pins, which are assigned specific functions. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RESET#
30. WP#
31. A8
32. A9

Functional Features

• Easy integration: The AT49F001T-12TI can be easily integrated into various electronic systems.
• Versatile interface: It supports a standard parallel interface for data transfer.
• Flexible write protection: The device offers write protection options to prevent accidental modification of stored data.
• Sector erase capability: It allows for erasing specific sectors, enabling efficient memory management.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of digital information.
• Fast access time enables quick retrieval of data.
• Low power consumption minimizes energy usage.
• Reliable endurance and data retention characteristics ensure long-term usability.

Disadvantages

• Limited erase/program cycle endurance compared to some other non-volatile memory technologies.
• Higher cost per bit compared to certain volatile memory alternatives.

Working Principles

The AT49F001T-12TI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate of each memory cell, representing the stored information. To read the data, the charges are sensed and interpreted as binary values.

Detailed Application Field Plans

The AT49F001T-12TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-90TC: 2 megabit (256 kilobytes) flash EEPROM with a faster access time of 90 ns.
2. AT49F010-70PC: 1 megabit (128 kilobytes) flash EEPROM with a slower access time of 70 ns.
3. AT49F040-70TU: 4 megabit (512 kilobytes) flash EEPROM with the same access time of 120 ns.

These alternative models offer different capacities and access times to cater to specific application requirements.

Word count: 560 words