AT49F002N-70TC

Product Overview

Category

AT49F002N-70TC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49F002N-70TC has a storage capacity of 2 megabits.
• Fast access time: It offers quick read and write operations.
• Low power consumption: It operates efficiently with low power requirements.

Package

The AT49F002N-70TC is available in a Thin Small Outline Package (TSOP) format.

Essence

This product is essential for data storage and retrieval in various electronic applications.

Packaging/Quantity

The AT49F002N-70TC is typically packaged in reels, with each reel containing a specific quantity of devices.

Specifications

• Storage Capacity: 2 Megabits
• Access Time: 70 nanoseconds
• Supply Voltage: 5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP

Detailed Pin Configuration

The AT49F002N-70TC has a total of 32 pins. The pin configuration is as follows:

1. VCC - Power supply voltage
2. A0-A16 - Address inputs
3. CE - Chip enable
4. OE - Output enable
5. WE - Write enable
6. I/O0-I/O7 - Data input/output lines
7. RY/BY# - Ready/Busy output
8. RESET# - Reset input
9. RP - Reserved pin
10. NC - No connection

Functional Features

• Random access: Allows direct access to any memory location.
• Byte-wise programming: Enables individual byte programming.
• Sector erase capability: Allows erasing of specific memory sectors.
• Hardware and software protection: Provides security features to prevent unauthorized access.
• High reliability: Offers robust performance and data integrity.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Fast access time allows for quick data retrieval.
• Low power consumption extends battery life in portable devices.
• Sector erase capability enables efficient memory management.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Higher cost per megabit compared to some alternatives.
• Limited endurance cycles for write operations.

Working Principles

The AT49F002N-70TC utilizes Flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary values, which can be read or modified through appropriate control signals. The device uses a combination of address lines, control signals, and data lines to perform read, write, and erase operations.

Detailed Application Field Plans

The AT49F002N-70TC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-55JI: Similar to AT49F002N-70TC, but with a faster access time of 55 nanoseconds.
2. AT49F002N-90PC: Similar to AT49F002N-70TC, but with a slower access time of 90 nanoseconds.
3. AT49F002N-12PI: Similar to AT49F002N-70TC, but with a lower supply voltage of 3.3V.

These alternative models offer different specifications to cater to specific application requirements.

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