AT49F002N-90TI

Product Overview

Category

AT49F002N-90TI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 90 nanoseconds.
• Low power consumption.
• Reliable and durable.

Package

AT49F002N-90TI is available in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of AT49F002N-90TI lies in its ability to provide reliable and non-volatile storage for electronic systems, ensuring data integrity even during power interruptions.

Packaging/Quantity

AT49F002N-90TI is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. A14
29. A13
30. A8
31. A9
32. A11

Functional Features

• Easy integration into existing systems.
• High-speed data transfer.
• Flexible programming and erasing options.
• Built-in protection mechanisms to prevent accidental data loss.
• Compatibility with a wide range of microcontrollers and processors.

Advantages

• Non-volatile nature ensures data integrity during power interruptions.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.
• Reliable and durable, suitable for harsh operating conditions.

Disadvantages

• Limited erase/program cycle endurance compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory solutions.
• Requires specific programming and erasing procedures, which may require additional hardware or software support.

Working Principles

AT49F002N-90TI utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data by trapping electrons in a floating gate, allowing the information to be retained even when power is removed. The stored data can be erased and reprogrammed using specific voltage levels and timing sequences.

Detailed Application Field Plans

AT49F002N-90TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Communication devices

Its high storage capacity, fast access time, and reliability make it suitable for applications that require non-volatile memory with moderate capacity.

Detailed and Complete Alternative Models

• AT49F002N-55JI
• AT49F002N-70JI
• AT49F002N-90JI
• AT49F002N-12JI

These alternative models offer different access times and operating temperature ranges, allowing users to choose the most suitable option based on their specific requirements.

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