AT49F002N-90VI

Product Overview

Category

AT49F002N-90VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 90 nanoseconds.
• Low power consumption.
• Reliable and durable.

Package

AT49F002N-90VI is available in a 32-pin plastic DIP (Dual In-line Package).

Essence

The essence of AT49F002N-90VI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

It is typically packaged in reels or tubes, with a quantity of 25 pieces per tube.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. GND
25. VCC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Easy to interface with microcontrollers and other electronic systems.
• Supports both read and write operations.
• Provides sector erase and chip erase functions.
• Offers protection against accidental write or erase operations.
• Low power consumption in standby mode.

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Reliable and durable, suitable for various applications.
• Low power consumption helps conserve energy.

Disadvantages

• Limited erase/write endurance compared to some other memory technologies.
• Relatively higher cost per bit compared to certain alternatives.
• Requires careful handling to prevent damage from electrostatic discharge.

Working Principles

AT49F002N-90VI utilizes flash memory technology to store data. It consists of a grid of memory cells, where each cell can store one or more bits of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These charges determine the state of each bit (0 or 1). The stored data can be accessed and modified through specific control signals.

Detailed Application Field Plans

AT49F002N-90VI finds applications in various fields, including: 1. Embedded systems 2. Consumer electronics 3. Automotive electronics 4. Industrial automation 5. Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49F002N-90VI are: 1. AT45DB161E-SHN-T by Adesto Technologies 2. S25FL128SAGMFI011 by Cypress Semiconductor 3. MX25L25635FMI-10G by Macronix International

These models provide comparable storage capacity, access time, and reliability to AT49F002N-90VI.

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