SST26WF016BAT-104I/CS

Product Overview

Category

The SST26WF016BAT-104I/CS belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The SST26WF016BAT-104I/CS retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 16 megabits (2 megabytes).
• Fast access time: The device provides quick read and write operations, ensuring efficient data handling.
• Low power consumption: The SST26WF016BAT-104I/CS is designed to minimize power usage, making it suitable for battery-powered devices.
• Wide operating voltage range: It can operate within a voltage range of 2.7V to 3.6V, accommodating various system requirements.

Package and Quantity

The SST26WF016BAT-104I/CS is available in a compact surface-mount package. Each package contains one unit of the device.

Specifications

• Memory Type: Flash
• Capacity: 16 Megabits (2 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 100 years
• Endurance: 100,000 write cycles

Pin Configuration

The SST26WF016BAT-104I/CS has a total of 8 pins, which are assigned specific functions:

1. Chip Select (/CS): Enables communication with the device when set to a low logic level.
2. Serial Clock (SCK): Provides the clock signal for synchronous data transfer.
3. Serial Data Input (SI): Transfers data from the microcontroller to the device.
4. Serial Data Output (SO): Transfers data from the device to the microcontroller.
5. Hold (/HOLD): Suspends ongoing operations without resetting the device.
6. Write Protect (/WP): Protects the memory from accidental write operations when set to a low logic level.
7. VCC: Power supply voltage input.
8. Ground (GND): Common ground reference.

Functional Features

• Fast Read and Write Operations: The SST26WF016BAT-104I/CS offers high-speed data transfer, ensuring efficient read and write operations.
• Sector Erase and Program: It supports sector-based erase and program operations, allowing selective modification of data.
• Software and Hardware Protection: The device provides various protection mechanisms, including software and hardware write protection, preventing unauthorized access or accidental modifications.
• Advanced Security Features: The SST26WF016BAT-104I/CS incorporates security features like unique device identification and password protection, enhancing data security.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Wide operating voltage range
• Long data retention period
• Enhanced security features

Disadvantages

• Limited endurance (100,000 write cycles)
• Relatively small package size

Working Principles

The SST26WF016BAT-104I/CS utilizes flash memory technology for data storage. It employs a floating gate transistor structure that allows electrons to be trapped in the floating gate, representing binary data. The stored data can be accessed and modified through the SPI interface.

Application Field Plans

The SST26WF016BAT-104I/CS finds applications in various fields, including: 1. Microcontrollers and embedded systems 2. Consumer electronics (e.g., smartphones, tablets, digital cameras) 3. Automotive electronics 4. Industrial control systems 5. Internet of Things (IoT) devices

Alternative Models

1. SST26VF016B-104I/CS: Similar to the SST26WF016BAT-104I/CS, but with a different interface (Quad Serial Peripheral Interface).
2. AT25SF041-SSHD-T: A comparable flash memory device with a smaller capacity (4 megabits) and a different package type.
3. W25Q128JVSIQ: An alternative flash memory chip with a higher capacity (128 megabits) and a different pin configuration.

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