SST39VF512-70-4C-WHE-T

Product Overview

Category

The SST39VF512-70-4C-WHE-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The SST39VF512-70-4C-WHE-T retains stored data even when power is removed.
• High capacity: It has a storage capacity of 512 kilobits (64 kilobytes).
• Fast access time: The device offers a fast access time of 70 nanoseconds.
• Wide operating voltage range: It can operate within a voltage range of 2.7V to 3.6V.

Package

The SST39VF512-70-4C-WHE-T is available in a standard 48-pin TSOP package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The SST39VF512-70-4C-WHE-T is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 64K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP
• Pin Count: 48

Detailed Pin Configuration

The SST39VF512-70-4C-WHE-T has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. WE#
27. CE#
28. OE#
29. RP#
30. BYTE#
31. VSS
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Sector Erase: The SST39VF512-70-4C-WHE-T supports sector erase operations, allowing specific sections of the memory to be erased.
• Byte Programming: It allows individual bytes within a sector to be programmed independently.
• Fast Read Access: The device offers fast read access time, enabling quick retrieval of stored data.
• Low Power Consumption: The SST39VF512-70-4C-WHE-T is designed to minimize power consumption during operation.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even in the absence of power.
• High storage capacity for various applications.
• Fast access time allows for efficient data retrieval.
• Wide operating voltage range provides flexibility in different electronic systems.

Disadvantages

• Limited endurance: Flash memory has a limited number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The SST39VF512-70-4C-WHE-T utilizes flash memory technology for data storage. It employs a combination of floating-gate transistors and charge trapping mechanisms to store and retrieve data. The device uses electrical signals to program, erase, and read the stored information.

Detailed Application Field Plans

The SST39VF512-70-4C-WHE-T finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. SST39VF010-70-4C-WHE-T: 1 Megabit (128 Kilobytes) Flash Memory, 70 ns Access Time.
2. SST39VF020-70-4C-WHE-T: 2 Megabit (256 Kilobytes) Flash Memory, 70 ns Access Time.
3. SST39VF040-70-4C-WHE-T: 4 Megabit (512 Kilobytes) Flash Memory,