SST39VF6402B-70-4C-EKE-T

Product Overview

Category

The SST39VF6402B-70-4C-EKE-T belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• High storage capacity: The SST39VF6402B-70-4C-EKE-T offers a generous storage capacity of 64 megabits.
• Fast data transfer: With a maximum operating frequency of 70 MHz, this flash memory device ensures efficient data transfer.
• Low power consumption: The SST39VF6402B-70-4C-EKE-T is designed to consume minimal power, making it suitable for battery-powered devices.
• Extended temperature range: This product can operate reliably within a wide temperature range, from -40°C to 85°C.
• RoHS compliant: The SST39VF6402B-70-4C-EKE-T adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package

The SST39VF6402B-70-4C-EKE-T is available in a compact and industry-standard 48-pin TSOP package.

Essence

As a flash memory device, the SST39VF6402B-70-4C-EKE-T serves as a non-volatile storage solution for electronic systems, allowing for reliable and fast data storage and retrieval.

Packaging/Quantity

This product is typically packaged in reels, with each reel containing a specific quantity of SST39VF6402B-70-4C-EKE-T flash memory devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Operating Frequency: Up to 70 MHz
• Supply Voltage: 2.7V - 3.6V
• Temperature Range: -40°C to 85°C
• Package Type: 48-pin TSOP

Detailed Pin Configuration

The SST39VF6402B-70-4C-EKE-T flash memory device features the following pin configuration:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable control
5. CE# - Chip enable control
6. OE# - Output enable control
7. RP# - Reset/Power-down control
8. RY/BY# - Ready/busy status output
9. WP#/ACC - Write protect or accelerated programming control
10. VSS - Ground

Functional Features

• Fast Read and Write Operations: The SST39VF6402B-70-4C-EKE-T offers high-speed read and write operations, allowing for efficient data access.
• Sector Erase Capability: This flash memory device supports sector erase operations, enabling selective erasure of specific memory sectors.
• Embedded Algorithms: The SST39VF6402B-70-4C-EKE-T incorporates advanced algorithms to ensure reliable data storage and retrieval.
• Low Power Consumption: With its low power consumption design, this product is suitable for battery-powered devices.
• High Reliability: The SST39VF6402B-70-4C-EKE-T is designed to provide long-term data retention and withstand frequent read/write cycles.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer speed
• Wide temperature range operation
• RoHS compliant

Disadvantages

• Limited compatibility with certain older systems
• Higher cost compared to lower-capacity flash memory devices

Working Principles

The SST39VF6402B-70-4C-EKE-T flash memory device utilizes a floating-gate transistor technology. It stores data by trapping electric charge within the floating gate, which can be later erased or programmed using specific voltage levels. This allows for non-volatile storage of data even when power is removed.

Detailed Application Field Plans

The SST39VF6402B-70-4C-EKE-T flash memory device finds applications in various electronic systems, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

1. SST39VF3201B-70-4I-WHE: 32 megabit flash memory device with similar characteristics and package type.
2. SST39VF1281B-70-4C-B3K: 128 megabit flash memory device with comparable specifications and pin configuration.
3. SST39VF2562B-70-4C-EKE: 256 megabit flash memory device offering