SST39WF800B-70-4I-B3KE-T

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Small form factor
• Package: BGA (Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Part Number: SST39WF800B-70-4I-B3KE-T
• Memory Size: 8 Megabits (1 Megabyte)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns
• Interface: SPI (Serial Peripheral Interface)
• Erase/Program Suspend & Resume Support: Yes
• Write Protection: Software and hardware protection options available
• Data Retention: Minimum 20 years

Detailed Pin Configuration

The SST39WF800B-70-4I-B3KE-T has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | VSS | Ground | | 3 | HOLD# | Suspends the current operation | | 4 | WP# | Write Protect | | 5-8 | NC | No Connection | | 9-16 | A0-A7 | Address Inputs | | 17-24 | DQ0-DQ7 | Data Inputs/Outputs | | 25 | CE# | Chip Enable | | 26 | WE# | Write Enable | | 27 | OE# | Output Enable | | 28-31 | NC | No Connection | | 32-39 | A8-A15 | Address Inputs | | 40-47 | NC | No Connection | | 48 | VCCQ | I/O Supply Voltage |

Functional Features

• High-speed read and write operations for quick data access
• Low power consumption, suitable for battery-powered devices
• Software and hardware write protection options to prevent unauthorized modifications
• Erase/Program Suspend & Resume support for flexible programming operations
• Reliable data retention for long-term storage

Advantages

• Small form factor allows for space-efficient integration into electronic devices
• High-speed operations enable fast data transfer and processing
• Low power consumption extends battery life in portable devices
• Versatile write protection options ensure data security
• Reliable data retention ensures long-term integrity of stored information

Disadvantages

• Limited storage capacity compared to larger flash memory options
• Higher cost per unit compared to lower capacity flash memory chips
• Requires a compatible interface (SPI) for communication with the host device

Working Principles

The SST39WF800B-70-4I-B3KE-T is based on the NOR Flash memory technology. It utilizes a grid of memory cells that can be electrically programmed and erased. The memory cells store data as binary information (0s and 1s) by trapping or releasing electrons within the floating gate structure. This trapped charge determines the state of each memory cell, allowing for non-volatile storage of data.

Detailed Application Field Plans

The SST39WF800B-70-4I-B3KE-T is widely used in various electronic devices that require reliable and efficient data storage. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

• SST39VF800B-70-4I-B3KE-T: Similar specifications but with a different interface (Parallel Interface)
• SST39WF1601-70-4I-B3KE-T: Higher capacity (16 Megabits) version with similar characteristics and package

Note: The above alternative models are provided as examples. Please refer to the manufacturer's documentation for a complete list of alternative models.

This encyclopedia entry provides an overview of the SST39WF800B-70-4I-B3KE-T flash memory chip. It includes basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.