M29F040B90N1T TR

Product Overview

Category

M29F040B90N1T TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High storage capacity: The M29F040B90N1T TR has a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The M29F040B90N1T TR is available in a surface-mount package. It is commonly found in a 32-pin TSOP (Thin Small Outline Package) configuration.

Essence

The essence of M29F040B90N1T TR lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of M29F040B90N1T TR devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 4 Megabits (512 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time:
  • Read: 90 ns
  • Program: 10 ms
  • Erase: 10 ms
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The M29F040B90N1T TR features a 32-pin TSOP package with the following pin configuration:

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. NC
17. DQ0
18. DQ1
19. DQ2
20. DQ3
21. DQ4
22. DQ5
23. DQ6
24. DQ7
25. VCC
26. GND
27. RP#
28. BYTE#
29. RESET#
30. WP#
31. NC
32. NC

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient memory management
• Built-in protection mechanisms to prevent accidental data corruption
• Low power consumption for extended battery life
• Compatibility with various microcontrollers and electronic systems

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Fast access time allows for quick data retrieval and updates.
• Sector erase capability enables efficient memory management.
• Low power consumption makes it suitable for battery-powered applications.

Disadvantages

• Limited storage capacity compared to newer memory technologies.
• Relatively slower program and erase times compared to some modern alternatives.
• Parallel interface may not be compatible with certain systems or require additional circuitry.

Working Principles

The M29F040B90N1T TR utilizes flash memory technology to store digital information. It employs a combination of floating-gate transistors and charge trapping to retain data even when power is removed. The device can be programmed and erased in sectors, allowing for efficient memory management.

Detailed Application Field Plans

The M29F040B90N1T TR is commonly used in various electronic systems and applications, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the M29F040B90N1T TR include: - AT29C040A - SST39SF040 - W27C040

These alternatives may have different specifications, pin configurations, or package options, so it is important to refer to their respective datasheets for detailed information.

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