MT29F128G08CBCBBH6-6R:B

Product Overview

Category

MT29F128G08CBCBBH6-6R:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CBCBBH6-6R:B offers a storage capacity of 128GB, allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08CBCBBH6-6R:B is energy-efficient, consuming minimal power during operation, which is beneficial for battery-powered devices.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F128G08CBCBBH6-6R:B is typically packaged in a surface-mount technology (SMT) package. It is available in reel packaging, with a standard quantity of 250 units per reel.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F128G08CBCBBH6-6R:B
• Memory Type: NAND Flash
• Density: 128GB
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: VFBGA-63

Detailed Pin Configuration

The MT29F128G08CBCBBH6-6R:B has a VFBGA-63 package with the following pin configuration:

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE# (Chip Enable)
4. RE# (Read Enable)
5. WE# (Write Enable)
6. R/B# (Ready/Busy)
7. WP# (Write Protect)
8. VCC (Power Supply)
9. GND (Ground)
10. DQ0-DQ15 (Data Input/Output)

Functional Features

• Page Read/Program: The MT29F128G08CBCBBH6-6R:B allows for reading and programming data at the page level, providing flexibility in data management.
• Block Erase: This NAND flash memory supports block erase operations, enabling efficient erasure of large data blocks.
• Wear-Leveling: The product incorporates wear-leveling algorithms to evenly distribute write and erase cycles across memory cells, enhancing overall lifespan and reliability.
• Error Correction Code (ECC): ECC functionality is integrated into the MT29F128G08CBCBBH6-6R:B, ensuring data integrity by detecting and correcting errors during read and program operations.

Advantages and Disadvantages

Advantages

• High storage capacity enables extensive data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of write and erase cycles.

Working Principles

The MT29F128G08CBCBBH6-6R:B utilizes NAND flash memory technology, which stores data in memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data, allowing for high-density storage. The data is written and read by applying voltage to specific cells within the memory array.

During a write operation, the NAND flash memory applies a high voltage to the selected memory cells, causing electrons to be trapped in the floating gate. This trapped charge represents the stored data. Conversely, during a read operation, the memory cells are subjected to a voltage, and the resulting current flow indicates the stored data.

Detailed Application Field Plans

The MT29F128G08CBCBBH6-6R:B finds extensive application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. Samsung K9K8G08U0D
2. Toshiba TH58NVG7D2FLA89
3. Intel JS29F128G08AMC1
4. SK Hynix H27UCG8T2BTR