MT29F128G08CBCCBH6-6R:C TR

Product Overview

Category

MT29F128G08CBCCBH6-6R:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CBCCBH6-6R:C TR offers a storage capacity of 128 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08CBCCBH6-6R:C TR is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small form factor devices.

Packaging/Quantity

The MT29F128G08CBCCBH6-6R:C TR is typically packaged in a surface mount technology (SMT) package. It is available in reel packaging, with a standard quantity of 2500 units per reel.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F128G08CBCCBH6-6R:C TR
• Memory Type: NAND Flash
• Storage Capacity: 128 GB
• Interface: Universal Flash Storage (UFS)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 63-ball VFBGA

Detailed Pin Configuration

The MT29F128G08CBCCBH6-6R:C TR has a 63-ball VFBGA package with the following pin configuration:

1. VCCQ
2. VCC
3. R/B#
4. CE#
5. CLE
6. ALE
7. WP#
8. RE#
9. WE#
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
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18. NC
19. NC
20. NC
21. NC
22. NC
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24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
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35. NC
36. NC
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40. NC
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42. NC
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51. NC
52. NC
53. NC
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55. NC
56. NC
57. NC
58. NC
59. NC
60. NC
61. NC
62. GND
63. VCCQ

Functional Features

• Error Correction Code (ECC): The MT29F128G08CBCCBH6-6R:C TR incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: This feature evenly distributes write operations across memory cells, preventing premature wear-out of specific blocks and extending the overall lifespan of the NAND flash memory.
• Bad Block Management: The product includes a mechanism to identify and manage bad blocks, ensuring reliable operation by avoiding the use of defective memory cells.
• Read Disturb Management: The MT29F128G08CBCCBH6-6R:C TR employs techniques to minimize read disturb effects, which can occur when reading data from neighboring cells during program or erase operations.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures efficient performance.
• Reliable and durable design ensures data integrity.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into small form factor devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance compared to some other non-volatile memory technologies.

Working Principles

The MT29F128G08CBCCBH6-6R:C TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information through the use of charge levels. When data is written, an electrical charge is applied to the appropriate memory cells,