MT29F1G08ABAFAH4-ITE:F

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics: Non-volatile, high capacity, fast read/write speeds
• Package: Integrated circuit (IC)
• Essence: Flash memory
• Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

• Model: MT29F1G08ABAFAH4-ITE:F
• Capacity: 1 gigabit (128 megabytes)
• Organization: 8 bits x 1,048,576 pages x 2,112 bytes
• Voltage Supply: 2.7V - 3.6V
• Interface: Parallel NAND
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 10 years

Detailed Pin Configuration

The MT29F1G08ABAFAH4-ITE:F chip has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. WP#
8. R/B#
9. I/O0
10. I/O1
11. I/O2
12. I/O3
13. I/O4
14. I/O5
15. I/O6
16. I/O7
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VSS

Functional Features

• High-speed data transfer: The MT29F1G08ABAFAH4-ITE:F chip offers fast read and write speeds, making it suitable for applications that require quick data access.
• Non-volatile storage: The flash memory technology used in this chip allows data to be retained even when power is removed, ensuring data integrity.
• High endurance: With a program/erase cycle endurance of 100,000 cycles, the chip can withstand frequent read/write operations without significant degradation.
• Wide operating temperature range: The chip can operate reliably in extreme temperature conditions, ranging from -40°C to +85°C.

Advantages and Disadvantages

Advantages: - Large capacity: The 1 gigabit capacity provides ample storage space for various applications. - Fast data transfer: The high-speed interface enables efficient data transfer between the chip and the host device. - Non-volatile: Data remains intact even during power loss or device shutdown. - Durable: The chip's high endurance ensures long-term reliability.

Disadvantages: - Limited compatibility: The parallel NAND interface may not be compatible with all devices, requiring specific hardware support. - Higher power consumption: Compared to some other memory technologies, flash memory can consume more power during read/write operations.

Working Principles

The MT29F1G08ABAFAH4-ITE:F chip utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the charge level on a floating gate. To read or write data, the chip applies voltages to specific pins to select the desired memory cell and perform the necessary operations.

Detailed Application Field Plans

The MT29F1G08ABAFAH4-ITE:F chip finds applications in various electronic devices, including: 1. Solid-state drives (SSDs) 2. USB flash drives 3. Digital cameras 4. Mobile phones 5. Tablets 6. Industrial control systems

Detailed and Complete Alternative Models

1. MT29F1G08ABADAWP-ITE:F
2. MT29F1G08ABAEAWP-ITE:F
3. MT29F1G08ABAFAPC-ITE:F
4. MT29F1G08ABAFAPD-ITE:F
5. MT29F1G08ABAFAPL-ITE:F

These alternative models offer similar specifications and functionality to the MT29F1G08ABAFAH4-ITE:F chip, providing options for different application requirements.

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