MT29F256G08CECBBH6-6R:B

Product Overview

Category

MT29F256G08CECBBH6-6R:B belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CECBBH6-6R:B offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08CECBBH6-6R:B is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F256G08CECBBH6-6R:B is typically packaged in a surface-mount technology (SMT) package. It is available in various quantities, ranging from individual units to bulk orders.

Specifications

• Storage Capacity: 256 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)

Detailed Pin Configuration

The pin configuration of the MT29F256G08CECBBH6-6R:B is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6-13 | A0-A7 | Address Inputs | | 14-21 | IO0-IO7 | Data Inputs/Outputs | | 22 | WE# | Write Enable | | 23 | RE# | Read Enable | | 24 | R/B# | Ready/Busy Status |

Functional Features

• Error Correction Code (ECC): The MT29F256G08CECBBH6-6R:B incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear-Leveling: This feature evenly distributes write operations across memory cells, preventing premature wear-out of specific areas and extending the overall lifespan of the NAND flash memory.
• Bad Block Management: The product includes mechanisms to identify and manage defective blocks, ensuring reliable storage by avoiding the use of faulty areas.

Advantages

• High storage capacity allows for extensive data storage needs.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08CECBBH6-6R:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltages to the memory cells and interpreting the resulting electrical signals.

Detailed Application Field Plans

The MT29F256G08CECBBH6-6R:B finds applications in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for replacing traditional hard disk drives (HDDs) in computers, providing faster data access and improved system performance.

Detailed and Complete Alternative Models

• MT29F128G08CBABH6-6R:B: 128 GB NAND flash memory with similar specifications.
• MT29F512G08CUABH6-6R:B: 512 GB NAND flash memory with similar specifications.
• MT29F1T08EMJECBH6-6R:B: 1 terabyte (TB) NAND flash memory with similar specifications.

In conclusion, the MT29F