MT29F2G01ABAGDWB-IT:G

Product Overview

Category

MT29F2G01ABAGDWB-IT:G belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

The MT29F2G01ABAGDWB-IT:G is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

The MT29F2G01ABAGDWB-IT:G is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 2GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (read), up to 100MB/s (write)

Detailed Pin Configuration

The MT29F2G01ABAGDWB-IT:G has a standard pin configuration for NAND flash memory chips. The pins are as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data inputs/outputs
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables the erasure of entire blocks of data.
• Random Access: Provides fast access to specific data within the memory.
• Wear-Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast read and write speeds enhance overall system performance.
• Non-volatile memory retains data even when power is disconnected.
• Compact size enables integration into small electronic devices.
• Low power consumption prolongs battery life.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Cost: NAND flash memory can be relatively expensive compared to other types of memory.

Working Principles

The MT29F2G01ABAGDWB-IT:G utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing data involves applying a high voltage to the gate to modify the charge level.

Detailed Application Field Plans

The MT29F2G01ABAGDWB-IT:G is widely used in various applications, including: - Smartphones and tablets for storing operating systems, apps, and user data. - Digital cameras for storing photos and videos. - Solid-state drives (SSDs) for high-speed data storage in computers and servers. - Automotive electronics for data logging and infotainment systems. - Industrial equipment for storing firmware and configuration data.

Detailed and Complete Alternative Models

• MT29F2G08ABAEAWP-IT:G
• MT29F2G16ABDWP-IT:G
• MT29F2G32ABDEAWP-IT:G
• MT29F2G64ABDEAWP-IT:G

These alternative models offer similar storage capacities and functionality, but may differ in package type, voltage range, or other specifications.