MT29F2G08ABAEAH4-AATX:E

Product Overview

• Category: NAND Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Surface Mount Technology (SMT) package
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 2 gigabytes (GB)
• Interface: Parallel NAND interface
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 52 megabytes per second (MB/s)
• Cell Type: Multi-Level Cell (MLC)
• ECC Support: Built-in Error Correction Code (ECC) for data integrity

Pin Configuration

The MT29F2G08ABAEAH4-AATX:E follows a standard pin configuration for NAND flash memory devices. The detailed pinout is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A15: Address inputs for memory access
4. DQ0-DQ7: Data input/output lines
5. WE#: Write Enable control signal
6. RE#: Read Enable control signal
7. CLE: Command Latch Enable control signal
8. ALE: Address Latch Enable control signal
9. CE#: Chip Enable control signal
10. R/B#: Ready/Busy status output

Functional Features

• High-speed data transfer for quick read/write operations
• Reliable data storage with built-in ECC support
• Low power consumption for energy-efficient operation
• Wide operating temperature range for versatile usage
• Compatibility with various electronic devices and systems

Advantages and Disadvantages

Advantages: - High storage capacity allows for ample data storage - Fast read/write speeds enhance overall system performance - ECC support ensures data integrity and reliability - Versatile operating temperature range enables usage in various environments

Disadvantages: - Limited endurance compared to other non-volatile memory technologies - Higher cost per gigabyte compared to some alternative storage solutions

Working Principles

The MT29F2G08ABAEAH4-AATX:E utilizes NAND flash memory technology to store and retrieve digital data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data, thanks to the MLC architecture.

During write operations, data is programmed into the memory cells by applying appropriate voltage levels to the control signals and data lines. Reading data involves sensing the electrical charge stored in the memory cells and converting it back into digital information.

The built-in ECC helps detect and correct errors that may occur during data storage or retrieval, ensuring data integrity and reliability.

Detailed Application Field Plans

The MT29F2G08ABAEAH4-AATX:E finds applications in various electronic devices and systems, including but not limited to:

1. Solid-State Drives (SSDs)
2. USB Flash Drives
3. Digital Cameras
4. Mobile Phones
5. Tablets
6. Industrial Control Systems
7. Automotive Infotainment Systems

Its high capacity, fast data transfer rates, and reliable performance make it suitable for data-intensive applications where non-volatile storage is required.

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT:E
2. MT29F2G08ABAEAWP-ITE:E
3. MT29F2G08ABAEAWP-IT:E
4. MT29F2G08ABAEAWP-ITE:E
5. MT29F2G08ABAEAWP-IT:E

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

(Note: The list of alternative models is not exhaustive and may vary based on product availability and updates in the market.)

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