MT29F2G08ABAEAWP-AT:E

Product Overview

Category: NAND Flash Memory
Use: Data storage in electronic devices
Characteristics: High capacity, non-volatile, fast read/write speeds
Package: Wafer-level chip-scale package (WLCSP)
Essence: Provides reliable and high-density data storage solution
Packaging/Quantity: Individual units packaged in trays or reels

Specifications

• Memory Capacity: 2 gigabits (256 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabytes per second (read), up to 10 megabytes per second (write)
• Endurance: Up to 100,000 program/erase cycles
• Retention: Up to 10 years

Detailed Pin Configuration

The MT29F2G08ABAEAWP-AT:E has a total of 48 pins, which are assigned as follows:

1. VCCQ
2. NC
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. A16
20. A17
21. A18
22. A19
23. A20
24. A21
25. A22
26. A23
27. A24
28. A25
29. ALE
30. CLE
31. RE#
32. WE#
33. WP#
34. R/B#
35. CE#
36. VCC
37. GND
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed data transfer for efficient read/write operations
• Reliable and durable storage solution with high endurance and long retention period
• Low power consumption for energy-efficient operation
• Error correction codes (ECC) for enhanced data integrity
• Block management algorithms for efficient wear leveling and bad block management

Advantages and Disadvantages

Advantages: - High capacity allows for storing large amounts of data - Fast read/write speeds enable quick access to stored information - Non-volatile memory retains data even when power is disconnected - Compact package size saves space in electronic devices - Suitable for a wide range of applications due to its reliability and durability

Disadvantages: - Limited write endurance compared to other types of memory - Higher cost per unit compared to some alternative memory technologies

Working Principles

The MT29F2G08ABAEAWP-AT:E utilizes NAND flash memory technology to store and retrieve digital data. It consists of multiple memory cells organized into blocks, which are further grouped into planes. Each memory cell can store multiple bits of data using a floating-gate transistor structure.

During a write operation, the memory controller applies a voltage to the selected memory cells' control gate and data lines, causing electrons to tunnel through the thin oxide layer onto the floating gate. This process traps charge on the floating gate, representing the stored data.

During a read operation, the memory controller applies appropriate voltages to the selected memory cells and senses the resulting current flow. The magnitude of the current indicates the stored data, allowing the controller to retrieve the desired information.

Detailed Application Field Plans

The MT29F2G08ABAEAWP-AT:E is widely used in various electronic devices and applications, including but not limited to:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Digital cameras
4. Mobile phones
5. Tablets
6. Industrial control systems
7. Automotive electronics
8. Medical devices
9. Gaming consoles
10. Embedded systems

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT:E
2. MT29F2G08ABAEAWP-CT:E
3. MT29F2G08ABAEAWP-BT:E
4. MT29F2G08ABAEAWP-DT:E
5. MT29F2G08ABAEAWP-ET:E

These alternative models offer similar specifications and functionality, providing options for different application requirements.

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