Micron Technology Inc.
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MT29F2G08ABBGAH4-IT:G

MT29F2G08ABBGAH4-IT:G

Product Overview

Category

The MT29F2G08ABBGAH4-IT:G belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F2G08ABBGAH4-IT:G offers a storage capacity of 2 gigabytes (GB), allowing for ample data storage.
  • Fast data transfer rate: With its high-speed interface, this NAND flash memory chip enables quick read and write operations.
  • Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
  • Low power consumption: The MT29F2G08ABBGAH4-IT:G is energy-efficient, consuming minimal power during operation.
  • Compact package: It comes in a small form factor, making it suitable for integration into compact electronic devices.
  • Durable design: This flash memory chip is built to withstand harsh environmental conditions and resist physical damage.

Package and Quantity

The MT29F2G08ABBGAH4-IT:G is packaged in a Ball Grid Array (BGA) package. Each package contains one NAND flash memory chip.

Specifications

  • Storage Capacity: 2 GB
  • Interface: NAND
  • Supply Voltage: 3.3V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 200 megabytes per second (MB/s)
  • Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F2G08ABBGAH4-IT:G has a total of 48 pins. Here is the detailed pin configuration:

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. WP#
  9. NC
  10. NC
  11. NC
  12. NC
  13. NC
  14. NC
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • Page Read/Program/Erase: The MT29F2G08ABBGAH4-IT:G allows for efficient reading, programming, and erasing of data at the page level.
  • Block Management: It incorporates advanced block management algorithms to optimize data storage and improve performance.
  • Error Correction Code (ECC): This flash memory chip utilizes ECC techniques to ensure data integrity and reliability.
  • Wear-Leveling: The product employs wear-leveling algorithms to evenly distribute write operations across memory cells, extending the lifespan of the chip.

Advantages and Disadvantages

Advantages

  • High storage capacity enables ample data storage.
  • Fast data transfer rate facilitates quick read and write operations.
  • Reliable performance ensures consistent data access.
  • Low power consumption prolongs battery life in portable devices.
  • Compact package allows for easy integration into various electronic devices.
  • Durable design withstands harsh environmental conditions.

Disadvantages

  • Limited erase/program cycles may affect the lifespan of the chip.
  • Higher cost compared to other types of memory storage.

Working Principles

The MT29F2G08ABBGAH4-IT:G utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using electrical charges. When data is written, the charges are stored in the memory cells. During read operations, the charges are detected and converted back into digital data.

Detailed Application Field Plans

The MT29F2G08ABBGAH4-IT:G finds applications in various electronic devices, including: 1. Smartphones and tablets for data storage and app installation. 2. Digital cameras for storing photos and videos. 3. Solid-state drives (SSDs) for high-speed data storage in computers and servers. 4. Portable media players for storing music and video files. 5. Automotive electronics for data logging and infotainment systems.

Detailed and Complete Alternative Models

  1. MT29F2G08ABAEAWP-IT

기술 솔루션에 MT29F2G08ABBGAH4-IT:G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. Question: What is the MT29F2G08ABBGAH4-IT:G?
    Answer: The MT29F2G08ABBGAH4-IT:G is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Question: What is the capacity of the MT29F2G08ABBGAH4-IT:G?
    Answer: The MT29F2G08ABBGAH4-IT:G has a capacity of 2 gigabytes (GB).

  3. Question: What is the interface used by the MT29F2G08ABBGAH4-IT:G?
    Answer: The MT29F2G08ABBGAH4-IT:G uses a standard 8-bit parallel interface.

  4. Question: What is the operating voltage range for the MT29F2G08ABBGAH4-IT:G?
    Answer: The MT29F2G08ABBGAH4-IT:G operates within a voltage range of 2.7V to 3.6V.

  5. Question: Can the MT29F2G08ABBGAH4-IT:G be used in industrial applications?
    Answer: Yes, the MT29F2G08ABBGAH4-IT:G is designed for industrial-grade applications and can withstand harsh environments.

  6. Question: Does the MT29F2G08ABBGAH4-IT:G support wear-leveling algorithms?
    Answer: Yes, the MT29F2G08ABBGAH4-IT:G supports built-in wear-leveling algorithms to ensure even distribution of data writes across the memory cells.

  7. Question: What is the maximum read speed of the MT29F2G08ABBGAH4-IT:G?
    Answer: The MT29F2G08ABBGAH4-IT:G has a maximum read speed of 50 megabytes per second (MB/s).

  8. Question: Can the MT29F2G08ABBGAH4-IT:G be used as a boot device?
    Answer: Yes, the MT29F2G08ABBGAH4-IT:G can be used as a boot device in various embedded systems.

  9. Question: Does the MT29F2G08ABBGAH4-IT:G support hardware data protection features?
    Answer: Yes, the MT29F2G08ABBGAH4-IT:G supports hardware data protection features like ECC (Error Correction Code) and bad block management.

  10. Question: Is the MT29F2G08ABBGAH4-IT:G compatible with common NAND flash controllers?
    Answer: Yes, the MT29F2G08ABBGAH4-IT:G is compatible with most standard NAND flash controllers available in the market.