MT29F3T08EUHBBM4-3R:B

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed, non-volatile
Package: Integrated circuit (IC)
Essence: NAND Flash memory
Packaging/Quantity: Individual IC package, quantity varies based on customer requirements

Specifications

• Model: MT29F3T08EUHBBM4-3R:B
• Memory Capacity: 8 GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Access Time: 25 ns
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F3T08EUHBBM4-3R:B has a total of 48 pins. The pin configuration is as follows:

1. VCCQ: Power supply for I/O buffers
2. DQ0-DQ15: Data input/output lines
3. WE#: Write enable control
4. RE#: Read enable control
5. CLE: Command latch enable
6. ALE: Address latch enable
7. CE#: Chip enable control
8. R/B#: Ready/busy status output
9. WP#: Write protect control
10. VSSQ: Ground for I/O buffers

... (continue listing the remaining pins)

Functional Features

• High-speed data transfer
• Non-volatile storage
• Error correction capability
• Block erase and program operations
• Wear-leveling algorithm for extended lifespan
• Bad block management

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access speed - Low power consumption - Compact form factor - Reliable data retention

Disadvantages: - Limited program/erase cycles - Higher cost compared to other memory technologies - Susceptible to physical damage (e.g., electrostatic discharge)

Working Principles

The MT29F3T08EUHBBM4-3R:B is based on NAND Flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a floating-gate transistor. To write data, an electrical charge is applied to the floating gate, altering its state. Reading data involves detecting the charge level in each cell. The memory is divided into blocks, which can be individually erased or programmed.

Detailed Application Field Plans

The MT29F3T08EUHBBM4-3R:B is widely used in various applications, including: - Solid-state drives (SSDs) - USB flash drives - Embedded systems - Consumer electronics (e.g., smartphones, tablets) - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F8G08ABABA: 8 GB NAND Flash memory with similar specifications
2. MT29F16G08CBABA: 16 GB NAND Flash memory with similar specifications
3. MT29F32G08CBABA: 32 GB NAND Flash memory with similar specifications
4. MT29F64G08CBABA: 64 GB NAND Flash memory with similar specifications

(Note: This list is not exhaustive and alternative models may vary based on specific requirements and availability.)

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