MT29F4G16ABADAWP-AIT:D

Product Overview

Category

MT29F4G16ABADAWP-AIT:D belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABADAWP-AIT:D offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F4G16ABADAWP-AIT:D comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G16ABADAWP-AIT:D is available in a surface-mount package. The exact package type and quantity may vary depending on the manufacturer's specifications.

Essence

The essence of MT29F4G16ABADAWP-AIT:D lies in its ability to provide high-capacity, reliable, and fast data storage for electronic devices.

Specifications

• Storage Capacity: 4 gigabits (4 Gb)
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

The MT29F4G16ABADAWP-AIT:D has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE# (Chip Enable): Enables or disables the device
4. CLE (Command Latch Enable): Latches command inputs
5. ALE (Address Latch Enable): Latches address inputs
6. RE# (Read Enable): Enables read operation
7. WE# (Write Enable): Enables write operation
8. R/B# (Ready/Busy): Indicates device status
9. DQ0-DQ7 (Data Input/Output): Bi-directional data bus

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Erases a block of memory cells, making them available for new data storage.
• Read Operation: Retrieves stored data from the memory cells.
• Error Correction: Utilizes advanced error correction techniques to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across the memory cells to extend the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate allows for quick access to stored information.
• Reliable performance ensures data integrity.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it may become unreliable.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

The MT29F4G16ABADAWP-AIT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a combination of electrical charges. The working principles involve programming, erasing, and reading operations.

During a programming operation, data is written into the memory cells by applying appropriate voltages to specific pins. Erasing a block involves removing all previously stored data from the selected block of memory cells. Reading operations retrieve the stored data by sensing the electrical charges in the memory cells.

Detailed Application Field Plans

The MT29F4G16ABADAWP-AIT:D finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP-IT:E
2. MT29F4G08ABAEAWP-IT:J
3. MT29F4G08ABAEAWP-IT:K
4. MT29F4G08ABAEAWP-IT:L
5. MT29F4G08ABAEAWP-IT:M

These alternative models offer similar specifications and functionality to the