MT29F8G08ADADAH4-E:D TR

Product Overview

• Category: NAND Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Reliable and durable
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Model: MT29F8G08ADADAH4-E:D TR
• Capacity: 8 gigabytes (GB)
• Interface: Parallel
• Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Cell Type: Multi-Level Cell (MLC)
• Endurance: Up to 10,000 program/erase cycles

Detailed Pin Configuration

The MT29F8G08ADADAH4-E:D TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. RE#
35. WE#
36. CLE
37. ALE
38. CE#
39. WP#
40. R/B#
41. DQ0
42. DQ1
43. DQ2
44. DQ3
45. DQ4
46. DQ5
47. DQ6
48. DQ7

Functional Features

• High-speed data transfer for efficient read and write operations
• Error correction algorithms for enhanced data reliability
• Wear-leveling techniques to distribute data evenly across memory cells, increasing lifespan
• Bad block management to isolate and replace faulty memory blocks
• Power-saving features for reduced energy consumption

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rate - Reliable and durable - Suitable for a wide range of applications - Cost-effective solution for data storage

Disadvantages: - Limited endurance compared to other types of memory - Higher power consumption compared to some newer memory technologies

Working Principles

The MT29F8G08ADADAH4-E:D TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using multi-level cell (MLC) technology. When data is written, electrical charges are applied to the memory cells, altering their state to represent the stored data. To read the data, the memory controller measures the electrical charge in each cell.

Detailed Application Field Plans

The MT29F8G08ADADAH4-E:D TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Smartphones and tablets
2. Solid-state drives (SSDs)
3. Digital cameras
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems

Detailed and Complete Alternative Models

1. MT29F8G08ABACAWP-IT: Similar specifications, different package type (TSOP)
2. MT29F8G08ABACAH4-IT: Similar specifications, higher endurance rating
3. MT29F8G08ABACAWP:D TR: Similar specifications, different package type (Tape and reel)

These alternative models offer similar functionality and can be considered as alternatives to the MT29F8G08ADADAH4-E:D TR based on specific requirements and compatibility with existing designs.

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