MT29F8G16ABACAH4-IT:C TR

Product Overview

Category

MT29F8G16ABACAH4-IT:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F8G16ABACAH4-IT:C TR offers a storage capacity of 8 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures reliable data retention and endurance, making it suitable for long-term use.
• Compact package: The MT29F8G16ABACAH4-IT:C TR comes in a small form factor, enabling easy integration into various electronic devices.
• Low power consumption: This NAND flash memory is designed to consume minimal power, contributing to energy efficiency.

Packaging/Quantity

The MT29F8G16ABACAH4-IT:C TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F8G16ABACAH4-IT:C TR
• Memory Type: NAND Flash
• Storage Capacity: 8 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CLE
19. ALE
20. RE#
21. WE#
22. WP#
23. R/B#
24. CE#
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. GND
48. VCC

Functional Features

• Page Program Operation: The MT29F8G16ABACAH4-IT:C TR allows data to be programmed in pages, enhancing efficiency.
• Block Erase Operation: This NAND flash memory supports block erase operations, enabling quick and convenient data erasure.
• Read Operation: It provides fast and reliable read operations, allowing for efficient retrieval of stored data.
• Wear-Leveling Algorithm: The product incorporates a wear-leveling algorithm that evenly distributes write operations across memory cells, prolonging the lifespan of the device.
• Error Correction Code (ECC): ECC functionality is implemented to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and endurance.
• Compact package facilitates easy integration into various devices.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited compatibility with certain legacy systems that do not support NAND flash memory.
• Higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F8G16ABACAH4-IT:C TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. When data is written, the charge is adjusted accordingly. During read operations, the stored charge is measured to determine the stored data.

Detailed Application Field Plans

The MT29F8G16ABACAH4-IT:C TR finds applications in various electronic devices, including: 1. Smartphones and tablets: Used for storing operating systems, applications, and user data. 2. Digital cameras: Enables storage of high-resolution photos and videos. 3. Solid-state drives (SSDs): Provides high-speed and reliable storage for computer systems.

Detailed and Complete Alternative Models

1. MT29F8G08ABACAH4-IT:C TR: 8