MT51J256M32HF-50:A

Product Overview

Category

MT51J256M32HF-50:A belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High storage capacity: The MT51J256M32HF-50:A offers a large storage capacity, allowing for the storage of a significant amount of data.
• Fast data access: With its high-speed data access capabilities, this product ensures quick retrieval and transfer of information.
• Low power consumption: The MT51J256M32HF-50:A is designed to consume minimal power, making it energy-efficient.
• Compact package: This product comes in a compact package, enabling easy integration into various electronic devices.
• Reliable performance: It provides reliable and stable performance, ensuring the integrity and security of stored data.

Package and Quantity

The MT51J256M32HF-50:A is typically packaged in a small form factor, such as a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32M words x 8 bits
• Operating Voltage: 1.8V
• Clock Frequency: 400 MHz
• Interface: Double Data Rate 3 (DDR3)
• Operating Temperature Range: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The MT51J256M32HF-50:A has a specific pin configuration that facilitates its integration into electronic circuits. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. DQ16
21. DQ17
22. DQ18
23. DQ19
24. DQ20
25. DQ21
26. DQ22
27. DQ23
28. VSS
29. DQ24
30. DQ25
31. DQ26
32. DQ27
33. DQ28
34. DQ29
35. DQ30
36. DQ31
37. VDD
38. A0
39. A1
40. A2
41. A3
42. A4
43. A5
44. A6
45. A7
46. VSS
47. A8
48. A9
49. A10
50. A11
51. A12
52. A13
53. A14
54. A15
55. VDD
56. A16
57. A17
58. A18
59. A19
60. A20
61. BA0
62. BA1
63. RAS#
64. CAS#
65. WE#
66. CK
67. CKE
68. CS#
69. DM0
70. DM1
71. VSS
72. VREF

Functional Features

The MT51J256M32HF-50:A offers the following functional features:

1. High-speed data transfer: This product supports a clock frequency of 400 MHz, enabling fast and efficient data transfer.
2. Burst mode operation: It allows for burst mode operation, which enhances the overall performance and efficiency of data access.
3. Auto-refresh capability: The MT51J256M32HF-50:A incorporates an auto-refresh feature that ensures the integrity of stored data by periodically refreshing the memory cells.
4. Power-saving modes: This product includes power-saving modes to minimize power consumption during idle or low activity periods.
5. Error correction: It incorporates error correction techniques to detect and correct data errors, ensuring data reliability.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access
• Low power consumption
• Compact package
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Sensitive to electrical noise and interference

Working Principles

The MT51J256M32HF-50:A is based on Dynamic Random Access Memory (DRAM) technology. It utilizes a