MT53B512M64D4NK-062 WT:C TR

Basic Information Overview

• Category: Memory module
• Use: Storage and retrieval of data in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Compact size
• Package: Integrated circuit (IC) package
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single unit

Specifications

• Model: MT53B512M64D4NK-062 WT:C TR
• Capacity: 512 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 2666 megahertz (MHz)
• Voltage: 1.2 volts (V)
• Form Factor: 288-pin dual in-line memory module (DIMM)
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT53B512M64D4NK-062 WT:C TR memory module has a 288-pin configuration. The pins are arranged in a specific order to ensure proper connectivity with the host device. The pin configuration includes power supply pins, address pins, data pins, control pins, and ground pins.

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for fast and efficient data transfer between the memory module and the host device.
• Non-volatile storage: The memory module retains stored data even when power is removed, ensuring data integrity.
• Error correction: The module incorporates error correction techniques to detect and correct data errors, enhancing reliability.
• Low power consumption: The module operates at a low voltage, reducing power consumption and heat generation.

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast data transfer rate for improved performance - Compact size for easy integration into electronic devices - Error correction capabilities for enhanced reliability

Disadvantages: - Relatively higher cost compared to lower-capacity memory modules - Limited compatibility with older devices that do not support DDR4 technology

Working Principles

The MT53B512M64D4NK-062 WT:C TR memory module works by storing data in an array of capacitors within the integrated circuit. The stored data is accessed and retrieved through a series of electrical signals sent by the host device. The DDR4 SDRAM technology enables high-speed data transfer by utilizing advanced signaling techniques.

Detailed Application Field Plans

The MT53B512M64D4NK-062 WT:C TR memory module finds applications in various electronic devices, including: 1. Personal computers and laptops 2. Servers and data centers 3. Gaming consoles 4. Networking equipment 5. Embedded systems

Detailed and Complete Alternative Models

1. MT53B256M32D2NK-062 WT:C TR: 256MB capacity, DDR4 SDRAM, 2666MHz speed.
2. MT53B1024M128D8NK-062 WT:C TR: 1GB capacity, DDR4 SDRAM, 2666MHz speed.
3. MT53B2048M256D16NK-062 WT:C TR: 2GB capacity, DDR4 SDRAM, 2666MHz speed.
4. MT53B4096M512D32NK-062 WT:C TR: 4GB capacity, DDR4 SDRAM, 2666MHz speed.

These alternative models offer different capacities while maintaining similar specifications and compatibility with the same DDR4 technology.

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