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1N5273B (DO-35)

1N5273B (DO-35) Diode

Product Overview

Category:

The 1N5273B (DO-35) diode belongs to the category of semiconductor devices.

Use:

It is commonly used in electronic circuits for rectification, signal demodulation, and voltage regulation.

Characteristics:

  • Small size
  • High reliability
  • Low forward voltage drop
  • Fast switching speed

Package:

The 1N5273B (DO-35) diode is typically packaged in a glass-encapsulated axial lead package.

Packaging/Quantity:

It is usually available in reels or bulk packaging with varying quantities depending on the supplier.

Specifications

  • Maximum Reverse Voltage: 100V
  • Average Rectified Current: 0.5A
  • Forward Voltage Drop: 1V at 200mA
  • Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The 1N5273B (DO-35) diode has two leads, with the cathode identified by a band around one end of the diode body.

Functional Features

  • Acts as a one-way valve for electric current
  • Allows current to flow in only one direction
  • Provides protection against reverse voltage

Advantages and Disadvantages

Advantages

  • Small form factor
  • Reliable performance
  • Low forward voltage drop

Disadvantages

  • Limited maximum reverse voltage
  • Moderate rectified current capacity

Working Principles

The 1N5273B (DO-35) diode operates based on the principle of semiconductor junction behavior, allowing current to flow in one direction while blocking it in the opposite direction.

Detailed Application Field Plans

Signal Demodulation

The diode can be used in radio frequency circuits for demodulating amplitude-modulated (AM) signals.

Voltage Regulation

It can be employed in voltage regulator circuits to maintain a stable output voltage.

Rectification

Used in power supply circuits to convert alternating current (AC) to direct current (DC).

Detailed and Complete Alternative Models

  • 1N4001 (DO-41)
  • 1N4148 (DO-35)
  • 1N5819 (DO-41)

This comprehensive entry provides an in-depth understanding of the 1N5273B (DO-35) diode, covering its specifications, characteristics, applications, and alternatives.

기술 솔루션에 1N5273B (DO-35) 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the 1N5273B (DO-35) diode used for?

    • The 1N5273B diode is commonly used for general-purpose rectification and voltage regulation in electronic circuits.
  2. What are the electrical characteristics of the 1N5273B diode?

    • The 1N5273B diode has a maximum repetitive peak reverse voltage of 100V, a forward current of 200mA, and a forward voltage drop of approximately 1V at 10mA.
  3. Can the 1N5273B diode be used for reverse polarity protection?

    • Yes, the 1N5273B diode can be used for reverse polarity protection due to its ability to block current flow in the reverse direction.
  4. Is the 1N5273B diode suitable for low-power applications?

    • Yes, the 1N5273B diode is suitable for low-power applications such as signal rectification and voltage clamping.
  5. What are the temperature considerations for the 1N5273B diode?

    • The 1N5273B diode has an operating temperature range of -65°C to +175°C, making it suitable for a wide range of environmental conditions.
  6. Can the 1N5273B diode be used in high-frequency applications?

    • The 1N5273B diode can be used in moderate high-frequency applications, but its performance may be limited compared to specialized high-frequency diodes.
  7. How does the 1N5273B diode perform in transient voltage suppression applications?

    • The 1N5273B diode can be used for transient voltage suppression, providing protection against voltage spikes and surges.
  8. What are the typical package dimensions of the 1N5273B diode (DO-35)?

    • The DO-35 package typically measures approximately 2.6mm in length and 1.1mm in diameter.
  9. Is the 1N5273B diode RoHS compliant?

    • Yes, the 1N5273B diode is RoHS compliant, meeting the requirements for restriction of hazardous substances.
  10. Are there any common failure modes associated with the 1N5273B diode?

    • Common failure modes for the 1N5273B diode include thermal runaway under excessive current or voltage stress, and breakdown due to overvoltage conditions. Proper derating and protection measures should be considered to mitigate these risks.