Microsemi Corporation
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1N5821US
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1N5821US - English Editing Encyclopedia Entry

Product Overview

The 1N5821US belongs to the category of Schottky Rectifier Diodes. These diodes are widely used in electronic circuits for their low forward voltage drop and fast switching capabilities. The 1N5821US is specifically designed for applications requiring high current capability and low forward voltage drop.

Basic Information Overview

  • Category: Schottky Rectifier Diode
  • Use: Used in electronic circuits for power rectification and switching.
  • Characteristics: Low forward voltage drop, high current capability, fast switching speed.
  • Package: Axial leaded package.
  • Essence: Efficient power rectification and switching.
  • Packaging/Quantity: Available in tape and reel packaging with varying quantities.

Specifications

  • Forward Voltage Drop: Typically 0.45V at 3A
  • Reverse Voltage: 30V
  • Forward Current: 3A
  • Operating Temperature Range: -65°C to +125°C
  • Storage Temperature Range: -65°C to +150°C

Detailed Pin Configuration

The 1N5821US has a standard axial leaded package with two leads. The anode is connected to the positive terminal of the circuit, while the cathode is connected to the negative terminal.

Functional Features

  • Low forward voltage drop ensures minimal power loss.
  • Fast switching speed allows for efficient power management in circuits.
  • High current capability makes it suitable for power applications.

Advantages and Disadvantages

Advantages

  • Low forward voltage drop reduces power dissipation.
  • Fast switching speed enables efficient circuit operation.
  • High current capability supports power applications.

Disadvantages

  • Higher cost compared to standard silicon diodes.
  • Sensitive to reverse voltage spikes.

Working Principles

The 1N5821US operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes.

Detailed Application Field Plans

The 1N5821US is commonly used in: - Power supplies - Voltage regulators - DC-DC converters - Solar panel bypass diodes

Detailed and Complete Alternative Models

  • 1N5817US
  • 1N5819US
  • SS34
  • SS36

In conclusion, the 1N5821US Schottky Rectifier Diode offers efficient power rectification and switching capabilities, making it a valuable component in various electronic applications.

Word Count: 366

기술 솔루션에 1N5821US 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum forward voltage drop of 1N5821US?

    • The maximum forward voltage drop of 1N5821US is typically 0.5V at a forward current of 3A.

  2. What is the maximum reverse voltage of 1N5821US?

    • The maximum reverse voltage of 1N5821US is 30V.

  3. What is the maximum forward current rating of 1N5821US?

    • The maximum forward current rating of 1N5821US is 3A.

  4. What is the typical junction capacitance of 1N5821US?

    • The typical junction capacitance of 1N5821US is 150pF at a reverse bias of 4V.

  5. What is the operating temperature range of 1N5821US?

    • The operating temperature range of 1N5821US is -65°C to +175°C.

  6. Can 1N5821US be used in high-frequency applications?

    • Yes, 1N5821US can be used in high-frequency applications due to its low forward voltage drop and fast recovery time.

  7. Is 1N5821US suitable for use in power supply circuits?

    • Yes, 1N5821US is suitable for use in power supply circuits, especially as a rectifier diode.

  8. What is the package type of 1N5821US?

    • 1N5821US is available in a DO-201AD (DO-27) package.

  9. Does 1N5821US require a heatsink for high-power applications?

    • Yes, for high-power applications, it is recommended to use a heatsink with 1N5821US to dissipate heat effectively.

  10. Can 1N5821US be used in automotive electronics?

    • Yes, 1N5821US can be used in automotive electronics, such as in voltage regulation and power management systems.