Microsemi Corporation
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2N5050

2N5050 Transistor

Product Overview

The 2N5050 is a high-power NPN silicon transistor designed for general-purpose amplifier and switching applications. This transistor falls under the category of discrete semiconductor devices and is commonly used in electronic circuits for its high power handling capabilities and reliability.

Basic Information Overview

  • Category: Discrete Semiconductor Device
  • Use: General-purpose amplifier and switching applications
  • Characteristics: High power handling, reliable performance
  • Package: TO-3 metal can package
  • Essence: NPN silicon transistor
  • Packaging/Quantity: Typically sold individually or in small quantities

Specifications

  • Maximum Collector-Emitter Voltage (VCEO): 60V
  • Maximum Collector-Base Voltage (VCBO): 80V
  • Maximum Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 15A
  • Power Dissipation (PD): 115W
  • Transition Frequency (ft): 2 MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

The 2N5050 transistor has three pins: 1. Collector (C): Connected to the positive supply voltage in most applications. 2. Base (B): Input terminal for controlling the flow of current between collector and emitter. 3. Emitter (E): Connected to the ground or common reference point in most applications.

Functional Features

  • High power handling capability
  • Low saturation voltage
  • Fast switching speed
  • Suitable for high-frequency applications

Advantages and Disadvantages

Advantages

  • High power dissipation capability
  • Reliable performance in demanding applications
  • Suitable for high-frequency operation

Disadvantages

  • Relatively large package size
  • Limited operating temperature range compared to some modern alternatives

Working Principles

The 2N5050 operates based on the principles of bipolar junction transistors (BJTs). When a small current flows into the base terminal, it controls a much larger current flowing between the collector and emitter terminals. This allows the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The 2N5050 transistor finds application in various fields including: - Power amplifiers - Switching regulators - Motor control circuits - Audio amplifiers - RF amplifiers

Detailed and Complete Alternative Models

Some alternative models to the 2N5050 include: - TIP31C - MJ15003 - 2N3773 - MJE3055T

In conclusion, the 2N5050 transistor is a versatile component suitable for high-power amplifier and switching applications. Its robust characteristics and wide range of applications make it a popular choice in the field of electronics.

Word Count: 399

기술 솔루션에 2N5050 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the 2N5050 transistor used for?

    • The 2N5050 is a high-power NPN bipolar junction transistor commonly used in power amplifier and switching applications.

  2. What are the key specifications of the 2N5050 transistor?

    • The 2N5050 has a maximum collector current of 15A, a maximum collector-emitter voltage of 60V, and a maximum power dissipation of 150W.

  3. How can the 2N5050 be used in power amplifier circuits?

    • The 2N5050 can be used as a power amplifier to amplify signals in audio and radio frequency applications due to its high power handling capability.

  4. Can the 2N5050 be used in switching applications?

    • Yes, the 2N5050 can be used in high-power switching applications such as motor control and power supply circuits.

  5. What are the typical operating conditions for the 2N5050?

    • The 2N5050 is typically operated at a collector current of 7A and a collector-emitter voltage of 30V.

  6. What are the common circuit configurations for using the 2N5050?

    • The 2N5050 is commonly used in common emitter and common base configurations in amplifier and switching circuits.

  7. What are the thermal considerations when using the 2N5050 in high-power applications?

    • Proper heat sinking is essential to ensure the 2N5050 operates within its temperature limits, especially in high-power applications.

  8. Are there any alternative transistors that can be used in place of the 2N5050?

    • Yes, similar transistors like the MJL21193 and MJL21194 can be used as alternatives to the 2N5050 in certain applications.

  9. What are the typical failure modes of the 2N5050 transistor?

    • Common failure modes include thermal runaway due to inadequate heat dissipation and overvoltage stress leading to breakdown.

  10. Where can I find detailed application notes and reference designs for using the 2N5050 in technical solutions?

    • Detailed application notes and reference designs for the 2N5050 can be found in semiconductor manufacturer datasheets and application guides, as well as in technical literature on power electronics and amplifier design.