Microsemi Corporation
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2N5876

2N5876 Transistor

Product Overview

The 2N5876 is a high-power NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This transistor falls under the category of discrete semiconductor devices and is commonly used in electronic circuits where amplification or switching of signals is required.

Basic Information Overview

  • Category: Discrete Semiconductor Device
  • Use: Amplification and Switching
  • Characteristics: High Power, NPN Type
  • Package: TO-220
  • Essence: High Voltage, High Current Capability
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Maximum Collector-Emitter Voltage (VCEO): 80V
  • Maximum Collector-Base Voltage (VCBO): 100V
  • Maximum Collector Current (IC): 15A
  • Power Dissipation (Pd): 150W
  • Transition Frequency (ft): 4 MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

The 2N5876 transistor has three pins: the emitter, base, and collector. In the TO-220 package, the pinout configuration is as follows: - Emitter (E) - Pin 1 - Base (B) - Pin 2 - Collector (C) - Pin 3

Functional Features

  • High power handling capability
  • Low saturation voltage
  • Fast switching speed
  • Robust construction for reliability

Advantages and Disadvantages

Advantages

  • High power dissipation capability
  • Suitable for high-voltage applications
  • Fast switching characteristics

Disadvantages

  • Relatively larger package size compared to smaller signal transistors
  • Higher cost compared to low-power transistors

Working Principles

The 2N5876 operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals. This allows the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The 2N5876 transistor finds application in various fields including: - Power amplifiers - Motor control circuits - High-voltage switching circuits - Audio amplifiers - Voltage regulators

Detailed and Complete Alternative Models

Some alternative models to the 2N5876 include: - TIP31C - MJ15003 - MJE3055T - 2N3773 - BD139

In conclusion, the 2N5876 transistor is a versatile component suitable for high-power amplification and switching applications. Its robust design and high power-handling capabilities make it an essential part of many electronic circuits.

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기술 솔루션에 2N5876 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the 2N5876 transistor used for?

    • The 2N5876 is a high-power NPN bipolar junction transistor commonly used in power amplifier and switching applications.

  2. What are the key specifications of the 2N5876 transistor?

    • The 2N5876 has a maximum collector current of 15A, a maximum collector-emitter voltage of 80V, and a maximum power dissipation of 150W.

  3. How do I determine the appropriate biasing and operating conditions for the 2N5876?

    • The biasing and operating conditions for the 2N5876 can be determined using its datasheet, which provides information on recommended operating voltages, currents, and power dissipation limits.

  4. Can the 2N5876 be used in audio amplifier circuits?

    • Yes, the 2N5876 can be used in audio amplifier circuits due to its high power handling capabilities and low distortion characteristics.

  5. What are some common applications of the 2N5876 in technical solutions?

    • The 2N5876 is commonly used in power supply circuits, motor control, audio amplifiers, and high-power switching applications.

  6. How should the 2N5876 be mounted for optimal performance?

    • The 2N5876 should be mounted on a suitable heat sink to ensure proper heat dissipation and prevent overheating during operation.

  7. What are the typical operating temperatures for the 2N5876?

    • The 2N5876 has a recommended operating temperature range of -65°C to 200°C, making it suitable for a wide range of environmental conditions.

  8. Are there any specific considerations for driving the 2N5876 in high-power applications?

    • When driving the 2N5876 in high-power applications, it's important to ensure that the input signals and drive circuitry can provide the necessary current and voltage levels for proper operation.

  9. Can the 2N5876 be used in automotive or industrial applications?

    • Yes, the 2N5876 is suitable for use in automotive and industrial applications where high-power switching or amplification is required.

  10. What are the common failure modes of the 2N5876 and how can they be mitigated?

    • Common failure modes of the 2N5876 include thermal runaway and overvoltage stress. These can be mitigated by proper heat sinking, voltage regulation, and current limiting in the circuit design.