JAN1N6485US

Product Overview

• Category: Diode
• Use: Rectification and voltage regulation
• Characteristics: High current capability, low forward voltage drop
• Package: DO-41
• Essence: Silicon rectifier diode
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Forward Voltage Drop: 0.7V
• Reverse Voltage: 200V
• Forward Current: 3A
• Operating Temperature: -65°C to +175°C

Detailed Pin Configuration

The JAN1N6485US is a two-terminal device with an anode and a cathode. In the DO-41 package, the anode is typically denoted by a band.

Functional Features

• High current capability allows for efficient power handling
• Low forward voltage drop minimizes power loss
• Fast switching speed enables rapid response in circuits

Advantages

• Robust construction for reliable performance
• Suitable for high-frequency applications
• Wide operating temperature range

Disadvantages

• Relatively larger package size compared to surface-mount diodes
• Limited reverse voltage compared to some other diode types

Working Principles

The JAN1N6485US operates based on the principle of semiconductor junction behavior. When forward-biased, it allows current flow, while in reverse bias, it blocks current.

Detailed Application Field Plans

This diode is commonly used in power supply circuits, voltage regulators, and rectifier circuits. Its high current capability makes it suitable for applications requiring efficient power handling.

Detailed and Complete Alternative Models

• 1N4004: Similar characteristics and package, lower current rating
• 1N5408: Higher reverse voltage, similar current rating, larger package size

Note: The above alternative models are provided as examples and may not be direct substitutes for all applications.

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This content provides a comprehensive overview of the JAN1N6485US diode, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.