MXLSMCJ30A

Product Overview

• Belongs to: Electronic Components
• Category: Semiconductor
• Use: Power switching and amplification
• Characteristics: High voltage capability, low power consumption
• Package: TO-220AB
• Essence: Silicon NPN Power Transistor
• Packaging/Quantity: Individual packaging, quantity varies by supplier

Specifications

• Voltage Rating: 400V
• Current Rating: 3A
• Power Dissipation: 40W
• Operating Temperature: -65°C to 150°C
• Gain (hFE): 20 to 70

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High voltage capability
• Low saturation voltage
• Fast switching speed
• Complementary PNP type available (MXLSMCP30A)

Advantages

• Suitable for high voltage applications
• Low power consumption
• Reliable performance

Disadvantages

• Limited current rating compared to some alternatives
• Sensitive to overvoltage conditions

Working Principles

The MXLSMCJ30A is a silicon NPN power transistor designed for power switching and amplification. When a small current flows into the base (B) terminal, it controls a larger current flowing between the collector (C) and emitter (E) terminals. This allows the transistor to act as a switch or an amplifier in electronic circuits.

Detailed Application Field Plans

• Switching power supplies
• Audio amplifiers
• Motor control circuits
• Voltage regulators

Detailed and Complete Alternative Models

• MXLSMCJ40A: Higher current rating (4A)
• MXLSMCJ50A: Higher voltage rating (500V)
• MXLSMCJ30B: Different package (TO-220FP)

This comprehensive entry provides detailed information about the MXLSMCJ30A semiconductor, covering its product overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.