2N7002WT3G

Product Overview

Category

The 2N7002WT3G belongs to the category of small-signal field-effect transistors (FETs).

Use

It is commonly used for switching and amplification applications in electronic circuits.

Characteristics

• Low threshold voltage
• Low input capacitance
• High input impedance
• Small package size

Package

The 2N7002WT3G is typically available in a SOT-323 surface-mount package.

Essence

This FET is essential for controlling the flow of current in electronic circuits, especially in low-power applications.

Packaging/Quantity

It is usually supplied in reels with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 115mA
• Total Power Dissipation: 200mW
• Threshold Voltage (VGSth): 1.0V - 2.5V
• Input Capacitance (Ciss): 45pF
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2N7002WT3G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Fast switching speed
• Low ON-resistance
• Compatibility with low-voltage circuits
• High input impedance

Advantages and Disadvantages

Advantages

• Small package size
• Low threshold voltage
• Suitable for low-power applications

Disadvantages

• Limited maximum drain-source voltage
• Moderate continuous drain current rating

Working Principles

The 2N7002WT3G operates based on the control of the electric field within the semiconductor material, allowing it to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

Low-Power Switching Circuits

The 2N7002WT3G is ideal for use in low-power switching circuits such as sensor interfaces, battery-powered devices, and portable electronics.

Amplification Circuits

In amplification circuits, this FET can be utilized for signal amplification and impedance matching due to its high input impedance and low input capacitance.

Detailed and Complete Alternative Models

Some alternative models to the 2N7002WT3G include: - BS170: Similar small-signal FET with higher drain-source voltage rating - IRLML2502: Low threshold voltage FET with enhanced power dissipation capability - BSS138: Small-signal FET suitable for low-voltage applications

In conclusion, the 2N7002WT3G is a versatile small-signal FET with characteristics that make it well-suited for various low-power electronic applications, despite its limitations in maximum voltage and current handling capabilities.

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