2SA1419T-TD-E
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current gain, low noise, and high frequency capability - Package: SOT-23, SMD package - Essence: NPN silicon epitaxial planar transistor - Packaging/Quantity: Available in reels of 3000 units
Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (PD): 150mW - Transition Frequency (fT): 250MHz - Operating Temperature Range: -55°C to +150°C
Detailed Pin Configuration: - Pin 1 (Emitter): Connects to the emitter region of the transistor - Pin 2 (Base): Connects to the base region of the transistor - Pin 3 (Collector): Connects to the collector region of the transistor
Functional Features: - High current gain (hFE) of 100 to 300 - Low noise performance suitable for audio applications - High-frequency capability for RF amplification
Advantages: - Small SMD package for space-constrained designs - Wide operating temperature range - Suitable for high-frequency applications
Disadvantages: - Limited maximum collector current compared to other transistors - Relatively low breakdown voltage
Working Principles: The 2SA1419T-TD-E operates based on the principles of bipolar junction transistors, utilizing the interaction between minority and majority charge carriers to amplify or switch electronic signals.
Detailed Application Field Plans: - Audio amplification in portable devices - RF amplification in communication systems - Switching applications in electronic control circuits
Detailed and Complete Alternative Models: - 2SC2712 - BC337 - 2N3904 - MMBT3904
This comprehensive entry provides a detailed overview of the 2SA1419T-TD-E transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
기술 솔루션에 2SA1419T-TD-E 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum collector current of 2SA1419T-TD-E?
- The maximum collector current of 2SA1419T-TD-E is 1.5A.
What is the maximum collector-emitter voltage of 2SA1419T-TD-E?
- The maximum collector-emitter voltage of 2SA1419T-TD-E is 160V.
What is the power dissipation of 2SA1419T-TD-E?
- The power dissipation of 2SA1419T-TD-E is 1.5W.
What are the typical applications of 2SA1419T-TD-E?
- 2SA1419T-TD-E is commonly used in audio amplification, driver stages of audio equipment, and general purpose switching applications.
What is the gain (hFE) of 2SA1419T-TD-E?
- The gain (hFE) of 2SA1419T-TD-E typically ranges from 60 to 320.
Is 2SA1419T-TD-E suitable for low noise amplifier applications?
- Yes, 2SA1419T-TD-E can be used in low noise amplifier applications due to its low noise characteristics.
Does 2SA1419T-TD-E require a heat sink for operation?
- It is recommended to use a heat sink when operating 2SA1419T-TD-E near its maximum power dissipation to ensure proper thermal management.
What are the temperature specifications for 2SA1419T-TD-E?
- The operating temperature range for 2SA1419T-TD-E is typically -55°C to 150°C.
Can 2SA1419T-TD-E be used in high-frequency applications?
- While 2SA1419T-TD-E is not specifically designed for high-frequency applications, it can be used in moderate frequency applications with appropriate circuit design.
Are there any known reliability issues with 2SA1419T-TD-E?
- 2SA1419T-TD-E is a reliable transistor when operated within its specified ratings and conditions. However, it is important to follow proper handling and mounting procedures to ensure long-term reliability.