BAS21TMR6T1G
Product Overview
Category
BAS21TMR6T1G belongs to the category of semiconductor devices.
Use
It is commonly used in electronic circuits for rectification and switching applications.
Characteristics
- Low forward voltage drop
- High switching speed
- Small package size
Package
The BAS21TMR6T1G is typically available in a SOT-23 package.
Essence
This product is essential for enabling efficient signal processing and power management in electronic devices.
Packaging/Quantity
It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.
Specifications
- Maximum Forward Voltage: 0.715V
- Reverse Voltage: 250V
- Continuous Forward Current: 200mA
- Power Dissipation: 225mW
Detailed Pin Configuration
The BAS21TMR6T1G has three pins: 1. Anode 2. Cathode 3. No Connection (NC)
Functional Features
- Fast switching speed
- Low leakage current
- High reliability
Advantages
- Small form factor
- Low power dissipation
- Suitable for high-frequency applications
Disadvantages
- Limited maximum forward current compared to other diodes
- Sensitive to reverse voltage
Working Principles
The BAS21TMR6T1G operates based on the principles of semiconductor physics, utilizing its P-N junction to allow current flow in one direction while blocking it in the reverse direction.
Detailed Application Field Plans
This diode is widely used in: - Switching power supplies - Signal demodulation circuits - Overvoltage protection circuits
Detailed and Complete Alternative Models
Some alternative models to BAS21TMR6T1G include: - 1N4148 - 1N5819 - BAT54S
In conclusion, the BAS21TMR6T1G is a versatile semiconductor device with fast switching characteristics and low forward voltage drop, making it suitable for various electronic applications.
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기술 솔루션에 BAS21TMR6T1G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is BAS21TMR6T1G?
- BAS21TMR6T1G is a dual surface mount switching diode commonly used in electronic circuits for signal processing and switching applications.
What are the key features of BAS21TMR6T1G?
- BAS21TMR6T1G features low leakage current, high speed switching, and small package size, making it suitable for high frequency and low voltage applications.
What are the typical applications of BAS21TMR6T1G?
- BAS21TMR6T1G is commonly used in mixer and detector circuits, high-speed switching, and general purpose diode applications in consumer electronics, telecommunications, and industrial equipment.
What are the electrical characteristics of BAS21TMR6T1G?
- The electrical characteristics include a maximum repetitive peak reverse voltage of 250V, forward continuous current of 200mA, and a forward voltage drop of around 1V at 100mA.
How does BAS21TMR6T1G compare to other similar diodes?
- Compared to other diodes, BAS21TMR6T1G offers lower leakage current and faster switching speed, making it suitable for high-frequency applications.
What are the recommended operating conditions for BAS21TMR6T1G?
- It is recommended to operate BAS21TMR6T1G within a temperature range of -55°C to 150°C and to keep the junction temperature below 150°C to ensure proper performance.
Can BAS21TMR6T1G be used in rectifier circuits?
- While BAS21TMR6T1G can be used in rectifier circuits, it is more commonly employed in signal processing and switching applications due to its high-speed characteristics.
Are there any specific layout considerations when using BAS21TMR6T1G in a circuit?
- It is important to minimize parasitic capacitance and inductance in the layout design to optimize the high-frequency performance of BAS21TMR6T1G.
What are the packaging options available for BAS21TMR6T1G?
- BAS21TMR6T1G is available in various surface mount packages such as SOT-23 and SOT-323, offering flexibility in board design and assembly.
Where can I find detailed application notes and reference designs for BAS21TMR6T1G?
- Detailed application notes and reference designs for BAS21TMR6T1G can be found on the manufacturer's website or in technical documentation provided with the component.