ON Semiconductor
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FCB070N65S3
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FCB070N65S3

Introduction

The FCB070N65S3 is a power MOSFET belonging to the category of electronic components. This device is commonly used in various applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage, low on-resistance, high current capability
  • Package: TO-263-3
  • Essence: Efficient power management
  • Packaging/Quantity: Typically sold in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 650V
  • Current Rating: 70A
  • On-Resistance: 0.065 ohms
  • Gate Charge: 110nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The FCB070N65S3 follows the standard pin configuration for a TO-263-3 package, with three pins: gate, drain, and source.

Functional Features

  • High Voltage Rating: Allows for use in high-power applications
  • Low On-Resistance: Minimizes power loss and heat generation
  • Fast Switching Speed: Enables efficient power management
  • Enhanced Thermal Performance: Facilitates reliable operation under varying conditions

Advantages and Disadvantages

Advantages

  • High voltage rating suitable for demanding applications
  • Low on-resistance for efficient power transfer
  • Fast switching speed for effective power management

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Sensitive to static discharge and overvoltage events

Working Principles

The FCB070N65S3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The FCB070N65S3 finds extensive use in various power electronics applications, including: - Switch-mode power supplies - Motor control systems - Renewable energy systems - Electric vehicle powertrains

Detailed and Complete Alternative Models

Some alternative models to the FCB070N65S3 include: - IRFP4568PbF - STP80NF10 - IXFK44N50Q3

In conclusion, the FCB070N65S3 power MOSFET offers high-performance characteristics suitable for demanding power switching applications, making it a preferred choice in various industries.

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기술 솔루션에 FCB070N65S3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of FCB070N65S3?

    • The maximum drain-source voltage of FCB070N65S3 is 650V.

  2. What is the continuous drain current rating of FCB070N65S3?

    • The continuous drain current rating of FCB070N65S3 is 70A.

  3. What is the on-state resistance (RDS(on)) of FCB070N65S3?

    • The on-state resistance (RDS(on)) of FCB070N65S3 is typically 0.065 ohms.

  4. What is the gate threshold voltage of FCB070N65S3?

    • The gate threshold voltage of FCB070N65S3 is typically 2.5V.

  5. What are the typical applications for FCB070N65S3?

    • FCB070N65S3 is commonly used in applications such as motor control, power supplies, and inverters.

  6. What is the operating temperature range of FCB070N65S3?

    • The operating temperature range of FCB070N65S3 is -55°C to 150°C.

  7. Does FCB070N65S3 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of FCB070N65S3.

  8. Is FCB070N65S3 suitable for high-frequency switching applications?

    • FCB070N65S3 is designed for use in high-power, low-frequency applications and may not be ideal for high-frequency switching.

  9. What is the input capacitance of FCB070N65S3?

    • The input capacitance of FCB070N65S3 is typically 3700pF.

  10. Can FCB070N65S3 be used in parallel to increase current handling capability?

    • Yes, FCB070N65S3 can be used in parallel to increase current handling capability, but proper attention should be given to layout and thermal management.