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FCP190N65S3

FCP190N65S3 - Encyclopedia Entry

Introduction

The FCP190N65S3 is a power MOSFET belonging to the category of electronic components. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

  • Category: Electronic Components
  • Use: Power MOSFET for electronic circuits
  • Characteristics: High power handling capacity, low on-state resistance, fast switching speed
  • Package: TO-220AB
  • Essence: Efficient power management in electronic devices
  • Packaging/Quantity: Typically packaged individually or in reels

Specifications

  • Model: FCP190N65S3
  • Voltage Rating: 650V
  • Current Rating: 190A
  • Power Dissipation: 300W
  • Operating Temperature Range: -55°C to 175°C
  • Gate-Source Voltage (VGS): ±20V
  • On-State Resistance (RDS(on)): 0.019Ω

Detailed Pin Configuration

The FCP190N65S3 typically has three pins: 1. Gate (G): Controls the conductivity between the source and drain. 2. Drain (D): Connects to the positive supply voltage. 3. Source (S): Connects to the ground or negative supply voltage.

Functional Features

  • High Power Handling: Capable of managing high currents and voltages.
  • Low On-State Resistance: Minimizes power loss and heat generation.
  • Fast Switching Speed: Enables rapid switching in electronic circuits.

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-state resistance
  • Fast switching speed
  • Reliable performance under high temperatures

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful thermal management due to high power dissipation

Working Principles

The FCP190N65S3 operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the source and drain terminals. This allows for efficient control of power flow in electronic circuits.

Detailed Application Field Plans

The FCP190N65S3 is commonly used in the following applications: - Switched-mode power supplies - Motor control systems - Electric vehicle powertrains - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the FCP190N65S3 include: - IRFP4668PbF - STW75N65M5 - IXFK180N65X3

In conclusion, the FCP190N65S3 is a high-performance power MOSFET with excellent power handling capabilities, making it suitable for a wide range of electronic applications.

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기술 솔루션에 FCP190N65S3 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. Question: What is the maximum drain-source voltage for FCP190N65S3?
    Answer: The maximum drain-source voltage for FCP190N65S3 is 650V.

  2. Question: What is the continuous drain current rating of FCP190N65S3?
    Answer: The continuous drain current rating of FCP190N65S3 is 190A.

  3. Question: What is the on-resistance (RDS(on)) of FCP190N65S3?
    Answer: The on-resistance (RDS(on)) of FCP190N65S3 is typically 0.019 ohms.

  4. Question: What is the gate threshold voltage of FCP190N65S3?
    Answer: The gate threshold voltage of FCP190N65S3 is typically 2.5V.

  5. Question: Can FCP190N65S3 be used in high-power applications?
    Answer: Yes, FCP190N65S3 is suitable for high-power applications due to its high current and voltage ratings.

  6. Question: What are the typical applications for FCP190N65S3?
    Answer: FCP190N65S3 is commonly used in power supplies, motor control, and high-current switching applications.

  7. Question: Is FCP190N65S3 suitable for use in automotive electronics?
    Answer: Yes, FCP190N65S3 is often used in automotive electronic systems due to its high current handling capability.

  8. Question: What is the thermal resistance of FCP190N65S3?
    Answer: The thermal resistance of FCP190N65S3 is typically 0.45°C/W.

  9. Question: Can FCP190N65S3 be used in parallel to increase current handling capacity?
    Answer: Yes, FCP190N65S3 can be used in parallel to increase current handling capacity in high-power applications.

  10. Question: What are the recommended operating conditions for FCP190N65S3?
    Answer: FCP190N65S3 is typically operated at a maximum junction temperature of 175°C and a maximum gate-source voltage of ±20V.