FCPF190N65S3R0L

Product Overview

Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-220
Essence: Power efficiency and reliability
Packaging/Quantity: Bulk packaging, 50 pieces per pack

Specifications

• Voltage Rating: 650V
• Current Rating: 190A
• On-Resistance: 3.0mΩ
• Gate Charge: 190nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-resistance for high power efficiency
• Fast switching speed for improved performance
• High voltage rating for versatile applications
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages: - High power handling capability - Low on-resistance for reduced power loss - Fast switching speed for improved efficiency

Disadvantages: - Higher cost compared to standard MOSFETs - Larger physical size due to high power rating

Working Principles

The FCPF190N65S3R0L operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows a high current to flow from the drain to the source with minimal resistance.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of high-power applications including: - Switched-mode power supplies - Motor control - Inverters - Industrial power systems

Detailed and Complete Alternative Models

1. FCP190N65S3R0L
2. FCPF200N65S3R0L
3. FCPF180N65S3R0L

Note: The alternative models listed above are similar in specifications and functionality, providing flexibility in design and sourcing options.

This completes the entry for FCPF190N65S3R0L according to the English editing encyclopedia structure format.