FDB12N50TM

Introduction

The FDB12N50TM is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The FDB12N50TM is commonly used as a switching device in power supplies, lighting systems, motor control, and other electronic circuits.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion applications.
• Package: The FDB12N50TM is typically available in TO-263 packaging, providing thermal efficiency and mechanical robustness.
• Essence: Its essence lies in providing efficient power switching capabilities with minimal losses.
• Packaging/Quantity: The product is usually packaged in reels or tubes containing a specific quantity based on manufacturer specifications.

Specifications

• Voltage Rating: 500V
• Current Rating: 12A
• On-State Resistance: 0.52Ω
• Gate-Source Voltage (Max): ±30V
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-263
• Datasheet: [Link to Datasheet](insert link)

Detailed Pin Configuration

The FDB12N50TM follows the standard pin configuration for a TO-263 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High Efficiency: Low on-state resistance enables efficient power transfer.
• Fast Switching Speed: Facilitates rapid switching in electronic circuits.
• Low Gate Charge: Allows for minimal drive power requirements.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion applications.
• Fast switching speed enhances circuit performance.
• Low gate charge reduces drive power requirements.

Disadvantages

• Higher cost compared to traditional bipolar transistors.
• Susceptible to damage from overvoltage or overcurrent conditions.

Working Principles

The FDB12N50TM operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating the gate-source voltage, the MOSFET can effectively switch on and off, enabling power control in electronic circuits.

Detailed Application Field Plans

The FDB12N50TM finds extensive use in the following applications: - Power Supplies: Used in switch-mode power supplies for efficient voltage regulation. - Lighting Systems: Employed in LED drivers and ballast circuits for controlling illumination. - Motor Control: Utilized in motor drive circuits for precise speed and direction control. - Inverters: Integrated into inverter circuits for converting DC power to AC power in renewable energy systems.

Detailed and Complete Alternative Models

• FDP12N50TM: Similar power MOSFET with slightly different specifications.
• FDB10N50TM: Lower current rating variant for specific applications.
• FDB15N50TM: Higher current rating variant for demanding power applications.

In conclusion, the FDB12N50TM power MOSFET offers high efficiency, fast switching speed, and low gate charge, making it suitable for a wide range of power control applications. Its robust TO-263 package and precise specifications make it a preferred choice for engineers designing power electronics systems.

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