FDN336P: Transistor Encyclopedia Entry

Introduction

The FDN336P is a field-effect transistor (FET) belonging to the category of small-signal transistors. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Small-signal transistor
• Use: Amplification and switching in low-power applications
• Characteristics: Low power dissipation, high input impedance, and fast switching speed
• Package: SOT-23
• Essence: N-channel MOSFET
• Packaging/Quantity: Tape and reel packaging, typically available in quantities of 3000 units per reel

Specifications

• Drain-Source Voltage (VDS): 20V
• Continuous Drain Current (ID): 0.3A
• Total Power Dissipation (PD): 0.3W
• Gate-Source Voltage (VGS): ±8V
• On-Resistance (RDS(on)): 1.5Ω

Detailed Pin Configuration

The FDN336P has three pins: 1. Gate (G): Controls the conductivity between the source and drain. 2. Drain (D): Connects to the positive supply voltage. 3. Source (S): Connects to the ground or common reference point.

Functional Features

• High Input Impedance: Allows for easy interfacing with control circuits.
• Fast Switching Speed: Enables rapid on/off transitions for switching applications.
• Low Power Dissipation: Well-suited for low-power designs, reducing heat generation.

Advantages and Disadvantages

Advantages

• Low power dissipation
• High input impedance
• Fast switching speed

Disadvantages

• Limited maximum drain-source voltage
• Relatively low continuous drain current rating

Working Principles

The FDN336P operates based on the principle of field-effect modulation within the semiconductor material. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the source and drain, allowing for amplification or switching of signals.

Detailed Application Field Plans

The FDN336P is commonly used in various low-power applications, including: - Signal amplification in audio circuits - Level shifting in digital logic circuits - Power management in battery-operated devices

Detailed and Complete Alternative Models

Some alternative models to the FDN336P include: - 2N7002: Similar small-signal N-channel MOSFET with comparable specifications. - BS170: Another N-channel MOSFET suitable for low-power applications.

In conclusion, the FDN336P is a small-signal transistor with specific characteristics and applications, making it suitable for various low-power electronic designs.

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