ON Semiconductor
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FQB6N80TM
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FQB6N80TM

Product Overview

Category

The FQB6N80TM belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high voltage switching applications.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The FQB6N80TM is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 800V
  • Continuous Drain Current (ID): 6A
  • On-Resistance (RDS(on)): 1.5Ω
  • Gate-Source Voltage (VGS): ±30V
  • Total Gate Charge (Qg): 14nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The FQB6N80TM typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low gate charge enables fast switching, reducing power loss.
  • Low on-resistance ensures minimal conduction losses.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Fast switching speed for improved efficiency
  • Low on-resistance minimizes power loss

Disadvantages

  • May require careful handling due to its high voltage rating
  • Sensitive to static electricity and ESD

Working Principles

The FQB6N80TM operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET conducts, allowing current to flow through it.

Detailed Application Field Plans

The FQB6N80TM is widely used in the following applications: - Power supplies - Motor control systems - High voltage switching circuits - Inverters and converters

Detailed and Complete Alternative Models

Some alternative models to the FQB6N80TM include: - IRF840 - STP6NK90ZFP - FDPF7N80NZ

In conclusion, the FQB6N80TM power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for various power management and control applications.

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기술 솔루션에 FQB6N80TM 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. Question: What is the maximum drain-source voltage for FQB6N80TM?
    Answer: The maximum drain-source voltage for FQB6N80TM is 800V.

  2. Question: What is the continuous drain current rating for FQB6N80TM?
    Answer: The continuous drain current rating for FQB6N80TM is 6A.

  3. Question: Can FQB6N80TM be used in high-frequency switching applications?
    Answer: Yes, FQB6N80TM is suitable for high-frequency switching applications.

  4. Question: What is the typical on-resistance for FQB6N80TM?
    Answer: The typical on-resistance for FQB6N80TM is 1.5 ohms.

  5. Question: Is FQB6N80TM suitable for use in power supplies?
    Answer: Yes, FQB6N80TM is commonly used in power supply applications.

  6. Question: What is the maximum junction temperature for FQB6N80TM?
    Answer: The maximum junction temperature for FQB6N80TM is 150°C.

  7. Question: Can FQB6N80TM be used in motor control applications?
    Answer: Yes, FQB6N80TM is suitable for motor control applications.

  8. Question: Does FQB6N80TM have built-in protection features?
    Answer: FQB6N80TM does not have built-in protection features and may require external circuitry for protection.

  9. Question: What type of package does FQB6N80TM come in?
    Answer: FQB6N80TM is available in a TO-263 package.

  10. Question: Are there any recommended application circuits for FQB6N80TM?
    Answer: Yes, the datasheet for FQB6N80TM provides recommended application circuits for various technical solutions.