FQD2N80TM

Introduction

The FQD2N80TM is a power MOSFET belonging to the category of electronic components. This device is commonly used in various applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The FQD2N80TM is used as a switching device in power supply, motor control, and other high-power applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The FQD2N80TM is typically available in TO-252 packaging, providing thermal efficiency and ease of mounting.
• Essence: Its essence lies in providing efficient power switching capabilities in various electronic circuits.
• Packaging/Quantity: It is commonly available in reels containing a specific quantity, typically 250 or 500 units per reel.

Specifications

• Voltage Rating: 800V
• Current Rating: 2A
• On-State Resistance: 4.5Ω
• Gate Charge: 12nC
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-252

Detailed Pin Configuration

The FQD2N80TM features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S). The pinout arrangement is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features

• High Voltage Rating: With an 800V voltage rating, the FQD2N80TM can withstand high voltage levels, making it suitable for diverse applications.
• Low On-State Resistance: The low on-state resistance ensures minimal power loss during conduction, contributing to high efficiency.
• Fast Switching Speed: Its high switching speed enables rapid transitions between on and off states, facilitating efficient power control.

Advantages and Disadvantages

Advantages

• High voltage rating
• Low on-state resistance
• Fast switching speed
• Thermal efficiency due to TO-252 package

Disadvantages

• Limited current handling capacity compared to higher-rated devices
• Sensitivity to static discharge due to its MOSFET nature

Working Principles

The FQD2N80TM operates based on the principles of field-effect transistors. When a suitable voltage is applied to the gate terminal, it modulates the conductivity between the drain and source terminals, allowing controlled power flow through the device.

Detailed Application Field Plans

The FQD2N80TM finds extensive use in the following application fields: - Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation. - Motor Control: Employed in motor drive circuits for controlling the speed and direction of motors. - Inverters: Integrated into inverter circuits for converting DC power to AC power in renewable energy systems.

Detailed and Complete Alternative Models

Several alternative models with similar specifications and functionalities are available in the market, including: - IRF840 - STP16NF06 - FQP27P06 - IRL540

In conclusion, the FQD2N80TM power MOSFET offers high-voltage switching capabilities, low on-state resistance, and fast switching speed, making it a versatile component for various power electronics applications.

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