FQD7N20LTF

Product Overview

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The FQD7N20LTF is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 200V
Continuous Drain Current (ID): 7A
On-Resistance (RDS(on)): 0.4Ω
Gate-Source Voltage (VGS): ±20V
Total Gate Charge (Qg): 18nC

Detailed Pin Configuration

The FQD7N20LTF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage tolerance
Low power dissipation
Fast switching characteristics
Suitable for high-frequency applications

Advantages and Disadvantages

Advantages

Efficient power handling
Low conduction losses
Enhanced thermal performance

Disadvantages

Sensitivity to static electricity
Gate drive considerations required for optimal performance

Working Principles

The FQD7N20LTF operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage at the gate terminal.

Detailed Application Field Plans

The FQD7N20LTF finds extensive use in the following applications: - Switching power supplies - Motor control systems - LED lighting - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the FQD7N20LTF include: - IRF1010E - STP55NF06L - FQP30N06L - IRLB8748

In conclusion, the FQD7N20LTF power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications requiring efficient power management.

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