ON Semiconductor
이미지는 예시일 수 있습니다.
제품 세부사항은 사양을 확인하세요.
FQP13N50C
자세히보기 데이터시트

FQP13N50C

Product Overview

The FQP13N50C belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This component exhibits characteristics such as high voltage capability, low on-resistance, and fast switching speed. It is typically packaged in a TO-220 package and is available in various quantities to suit different production needs.

Specifications

  • Voltage Rating: 500V
  • Current Rating: 13A
  • Package Type: TO-220
  • On-Resistance: 0.52Ω
  • Gate Charge: 30nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The FQP13N50C features a standard TO-220 pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • High Voltage Capability: The FQP13N50C can withstand high voltages, making it suitable for applications requiring robust performance.
  • Low On-Resistance: This MOSFET exhibits low on-resistance, leading to reduced power dissipation and improved efficiency.
  • Fast Switching Speed: Its fast switching characteristics enable quick response times in electronic circuits.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The FQP13N50C operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a voltage is applied to the gate terminal, the MOSFET allows or restricts the flow of current between the drain and source terminals.

Detailed Application Field Plans

The FQP13N50C finds extensive use in various applications, including: - Switching power supplies - Motor control - Lighting systems - Audio amplifiers - Inverters

Detailed and Complete Alternative Models

Some alternative models to the FQP13N50C include: - IRF840 - STP16NF06L - FDP7030BL

In conclusion, the FQP13N50C power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it a versatile component for a wide range of electronic applications.

[Word count: 280]

기술 솔루션에 FQP13N50C 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage rating of FQP13N50C?

    • The maximum drain-source voltage rating of FQP13N50C is 500V.

  2. What is the continuous drain current rating of FQP13N50C?

    • The continuous drain current rating of FQP13N50C is 13A.

  3. What is the on-resistance of FQP13N50C?

    • The on-resistance of FQP13N50C is typically 0.52 ohms.

  4. Can FQP13N50C be used in switching applications?

    • Yes, FQP13N50C is suitable for switching applications due to its low on-resistance and high voltage rating.

  5. What is the maximum power dissipation of FQP13N50C?

    • The maximum power dissipation of FQP13N50C is 150W.

  6. Is FQP13N50C suitable for use in motor control applications?

    • Yes, FQP13N50C can be used in motor control applications due to its high current rating and voltage capability.

  7. Does FQP13N50C require a heat sink for high-power applications?

    • Yes, for high-power applications, it is recommended to use a heat sink to dissipate heat effectively.

  8. What is the gate-source threshold voltage of FQP13N50C?

    • The gate-source threshold voltage of FQP13N50C is typically 4V.

  9. Can FQP13N50C be used in automotive electronic systems?

    • Yes, FQP13N50C is suitable for use in automotive electronic systems, such as in power supply and motor drive circuits.

  10. What are some common protection measures when using FQP13N50C in circuit designs?

    • Common protection measures include overcurrent protection, overvoltage protection, and thermal management to ensure the reliable operation of FQP13N50C in circuit designs.