FQP6N80C: Semiconductor Device Encyclopedia Entry
Introduction
The FQP6N80C is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Basic Information Overview
- Category: Power MOSFET
- Use: The FQP6N80C is commonly used in power supply applications, motor control, and other high-power switching circuits.
- Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
- Package: TO-220
- Essence: The FQP6N80C is designed to handle high power levels with minimal losses.
- Packaging/Quantity: Typically available in reels or tubes containing multiple units.
Specifications
- Voltage Rating: 800V
- Current Rating: 6A
- On-State Resistance: 1.5Ω
- Gate-Source Voltage (Max): ±30V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The FQP6N80C features a standard TO-220 pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low On-State Resistance: Enables efficient power transfer and reduced conduction losses.
- High Switching Speed: Facilitates rapid switching in high-frequency applications.
- Low Gate Charge: Allows for minimal drive power requirements and faster switching.
Advantages and Disadvantages
Advantages
- High power handling capability
- Low conduction losses
- Fast switching speed
Disadvantages
- Higher gate drive voltage requirement compared to some alternative models
- Limited by its maximum voltage and current ratings
Working Principles
The FQP6N80C operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the device can efficiently switch high currents with minimal losses.
Detailed Application Field Plans
The FQP6N80C finds extensive use in various applications, including: - Switch-mode power supplies - Motor drives - Inverters - Audio amplifiers - Lighting systems
Detailed and Complete Alternative Models
Some alternative models to the FQP6N80C include: - IRFP460: Similar voltage and current ratings - STP6NK90ZFP: Comparable characteristics and package type - FQPF6N60C: Lower voltage rating but similar current handling capacity
In conclusion, the FQP6N80C power MOSFET offers high power handling capabilities, low on-state resistance, and fast switching speeds, making it suitable for diverse power electronics applications.
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What is the maximum drain-source voltage of FQP6N80C?
- The maximum drain-source voltage of FQP6N80C is 800V.
What is the continuous drain current rating of FQP6N80C?
- The continuous drain current rating of FQP6N80C is 6A.
What is the on-resistance of FQP6N80C?
- The on-resistance of FQP6N80C is typically 1.5 ohms.
Can FQP6N80C be used in high-power applications?
- Yes, FQP6N80C can be used in high-power applications due to its high voltage and current ratings.
What type of package does FQP6N80C come in?
- FQP6N80C comes in a TO-220 package.
Is FQP6N80C suitable for switching applications?
- Yes, FQP6N80C is suitable for switching applications due to its low on-resistance and high voltage rating.
What is the typical gate charge of FQP6N80C?
- The typical gate charge of FQP6N80C is 30nC.
Does FQP6N80C have built-in protection features?
- FQP6N80C does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What are the typical applications of FQP6N80C?
- Typical applications of FQP6N80C include power supplies, motor control, lighting, and audio amplifiers.
What is the thermal resistance of FQP6N80C?
- The thermal resistance of FQP6N80C is typically 3.1°C/W junction-to-case.