ON Semiconductor
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KSC1675CRBU

KSC1675CRBU

Introduction

The KSC1675CRBU is a versatile electronic component that belongs to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Amplification and Signal Processing
  • Characteristics: High Gain, Low Noise, Wide Frequency Range
  • Package: TO-92 Package
  • Essence: Bipolar Junction Transistor (BJT)
  • Packaging/Quantity: Individual Component

Specifications

  • Maximum Collector-Base Voltage (Vcb): 50V
  • Maximum Collector-Emitter Voltage (Vce): 45V
  • Maximum Emitter-Base Voltage (Veb): 5V
  • Continuous Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 400mW
  • Transition Frequency (ft): 150MHz

Detailed Pin Configuration

  1. Collector (C)
  2. Base (B)
  3. Emitter (E)

Functional Features

  • High Voltage Gain
  • Low Noise Performance
  • Broadband Amplification Capability
  • Small Signal Amplification

Advantages and Disadvantages

Advantages

  • Versatile Application Range
  • Low Distortion
  • Compact Size

Disadvantages

  • Limited Power Handling Capacity
  • Susceptible to Temperature Variations

Working Principles

The KSC1675CRBU operates based on the principles of bipolar junction transistors. It amplifies small input signals by controlling a larger output current using the voltage applied at the base terminal.

Detailed Application Field Plans

The KSC1675CRBU finds extensive use in various electronic circuits, including: - Audio Amplifiers - Radio Frequency (RF) Circuits - Oscillator Circuits - Signal Processing Systems

Detailed and Complete Alternative Models

  • BC547
  • 2N3904
  • MPS2222A
  • 2SC945

In conclusion, the KSC1675CRBU is a crucial semiconductor device with wide-ranging applications in electronics due to its high gain, low noise characteristics, and compact package. Its specifications, functional features, and alternative models make it a valuable component for amplification and signal processing needs.

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기술 솔루션에 KSC1675CRBU 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is KSC1675CRBU?

    • KSC1675CRBU is a high-performance silicon NPN epitaxial planar transistor designed for general-purpose amplifier and switching applications.

  2. What are the key features of KSC1675CRBU?

    • The key features include high current capability, low collector-emitter saturation voltage, and excellent hFE linearity.

  3. What are the typical applications of KSC1675CRBU?

    • Typical applications include audio amplifiers, driver stages of audio equipment, and general-purpose switching circuits.

  4. What is the maximum collector current (IC) of KSC1675CRBU?

    • The maximum collector current is 1.5A.

  5. What is the maximum collector-emitter voltage (VCEO) of KSC1675CRBU?

    • The maximum collector-emitter voltage is 120V.

  6. What is the power dissipation (PD) of KSC1675CRBU?

    • The power dissipation is 0.625W.

  7. What is the thermal resistance (Rthj-c) of KSC1675CRBU?

    • The thermal resistance from junction to case is 83.3°C/W.

  8. Is KSC1675CRBU RoHS compliant?

    • Yes, KSC1675CRBU is RoHS compliant.

  9. What are the recommended operating conditions for KSC1675CRBU?

    • The recommended operating conditions include a collector current of 100mA to 1A and a collector-emitter voltage of 45V.

  10. Where can I find the detailed datasheet for KSC1675CRBU?

    • The detailed datasheet can be found on the manufacturer's website or through authorized distributors.