MMBFV170LT3G

Introduction

The MMBFV170LT3G is a field-effect transistor (FET) belonging to the category of small signal transistors. This device is commonly used in electronic circuits for amplification and switching applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Small Signal Transistor
• Use: Amplification and Switching Applications
• Characteristics: Low Power Dissipation, High Input Impedance
• Package: SOT-23
• Essence: Field-Effect Transistor
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Drain-Source Voltage (VDS): 25V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 0.22A
• Total Power Dissipation (PD): 225mW
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The MMBFV170LT3G features a standard SOT-23 package with three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High Input Impedance
• Low Power Dissipation
• Fast Switching Speed

Advantages and Disadvantages

Advantages

• Small Package Size
• Low Input Capacitance
• High Gain

Disadvantages

• Limited Maximum Voltage and Current Ratings
• Susceptible to Electrostatic Discharge (ESD)

Working Principles

The MMBFV170LT3G operates based on the field-effect principle, where the flow of current between the source and drain terminals is controlled by the voltage applied to the gate terminal. This allows for efficient amplification and switching of electronic signals.

Detailed Application Field Plans

The MMBFV170LT3G finds extensive use in various electronic applications, including: - Audio Amplifiers - Signal Processing Circuits - Sensor Interfaces - Battery Management Systems

Detailed and Complete Alternative Models

For applications requiring similar functionality, alternative models to consider include: - 2N7002 - BS170 - DMN2004K

In conclusion, the MMBFV170LT3G is a versatile small signal transistor with distinct characteristics that make it suitable for a wide range of electronic applications, despite its limitations in voltage and current handling capabilities.

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