ON Semiconductor
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NJVMJD3055T4G
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NJVMJD3055T4G

Product Overview

Category

The NJVMJD3055T4G belongs to the category of power MOSFETs.

Use

It is commonly used as a switching device in electronic circuits, particularly in power supply and motor control applications.

Characteristics

  • Low on-state resistance
  • High input impedance
  • Fast switching speed
  • Low gate drive power
  • High power dissipation capability

Package

The NJVMJD3055T4G is typically available in a TO-252 package.

Essence

The essence of this product lies in its ability to efficiently control high currents and voltages in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 10A
  • RDS(ON) (Max) @ VGS = 10V: 0.115Ω
  • Input Capacitance (Ciss) @ VDS = 25V: 700pF
  • Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The NJVMJD3055T4G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • Minimal switching losses
  • Enhanced thermal performance
  • High reliability and ruggedness

Advantages

  • Efficient power management
  • Reduced heat generation
  • Improved system reliability
  • Compact design possibilities

Disadvantages

  • Sensitivity to electrostatic discharge (ESD)
  • Limited voltage and current handling compared to some higher-rated devices

Working Principles

The NJVMJD3055T4G operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is widely used in: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems - Inverter and converter designs

Detailed and Complete Alternative Models

Some alternative models to the NJVMJD3055T4G include: - IRF3205 - FQP30N06L - STP55NF06L - IRL540

In conclusion, the NJVMJD3055T4G power MOSFET offers efficient power management and reliable performance in various electronic applications, making it a popular choice for designers seeking high-performance switching devices.

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기술 솔루션에 NJVMJD3055T4G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is NJVMJD3055T4G?

    • NJVMJD3055T4G is a NPN Bipolar Junction Transistor (BJT) designed for general purpose amplifier and switching applications.

  2. What are the key features of NJVMJD3055T4G?

    • The key features include high current capability, low collector-emitter saturation voltage, and complementary PNP type available (NJVMJD2955T4G).

  3. What are the typical applications of NJVMJD3055T4G?

    • Typical applications include power linear and switching, motor control, and audio amplification.

  4. What is the maximum collector current of NJVMJD3055T4G?

    • The maximum collector current is 10A.

  5. What is the maximum collector-emitter voltage of NJVMJD3055T4G?

    • The maximum collector-emitter voltage is 60V.

  6. What is the thermal resistance of NJVMJD3055T4G?

    • The thermal resistance is 1.67°C/W.

  7. Is NJVMJD3055T4G RoHS compliant?

    • Yes, NJVMJD3055T4G is RoHS compliant.

  8. What is the operating temperature range of NJVMJD3055T4G?

    • The operating temperature range is -55°C to 150°C.

  9. Does NJVMJD3055T4G require external heat sinking?

    • It depends on the application, but for high-power applications, external heat sinking may be necessary.

  10. Is there a recommended circuit configuration for using NJVMJD3055T4G in a switching application?

    • A common recommended configuration is to use it as a high-side switch with appropriate base drive and protection circuitry.