ON Semiconductor
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NJVMJD50T4G
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NJVMJD50T4G

Product Overview

  • Category: Semiconductor
  • Use: Power MOSFET
  • Characteristics: High voltage, high current capability, low on-resistance
  • Package: TO-252
  • Essence: Efficient power switching
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 500V
  • Current Rating: 35A
  • On-Resistance: 0.04 ohms
  • Gate Threshold Voltage: 2.5V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Source
  2. Gate
  3. Drain

Functional Features

  • Low gate charge
  • Fast switching speed
  • Avalanche energy specified
  • RoHS compliant

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • RoHS compliant
  • Fast switching speed

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The NJVMJD50T4G operates based on the principles of field-effect transistors, utilizing a voltage-controlled input to regulate the flow of current between the source and drain terminals.

Detailed Application Field Plans

The NJVMJD50T4G is suitable for various applications including: - Switching power supplies - Motor control - Inverters - LED lighting - Solar inverters

Detailed and Complete Alternative Models

  • IRF840
  • FDP8878
  • STP55NF06L
  • IRLB8748

This comprehensive entry provides an in-depth understanding of the NJVMJD50T4G, covering its specifications, features, application fields, and alternative models, making it a valuable resource for engineers and enthusiasts in the semiconductor industry.

기술 솔루션에 NJVMJD50T4G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is NJVMJD50T4G?

    • NJVMJD50T4G is a high-power N-channel MOSFET designed for use in various technical solutions, such as power supplies and motor control.

  2. What is the maximum voltage and current rating of NJVMJD50T4G?

    • The maximum voltage rating is typically 500V, and the maximum continuous drain current is typically 50A.

  3. What are the typical applications of NJVMJD50T4G?

    • Typical applications include power supplies, motor control, inverters, and other high-power switching circuits.

  4. What are the key features of NJVMJD50T4G that make it suitable for technical solutions?

    • Some key features include low on-resistance, high current capability, fast switching speed, and rugged construction for reliability.

  5. What are the thermal characteristics of NJVMJD50T4G?

    • The MOSFET is designed with low thermal resistance to efficiently dissipate heat, making it suitable for high-power applications.

  6. How does NJVMJD50T4G compare to other similar MOSFETs in terms of performance and cost?

    • NJVMJD50T4G offers a balance of performance and cost-effectiveness compared to other MOSFETs in its class, making it a popular choice for various technical solutions.

  7. Are there any specific considerations for driving NJVMJD50T4G in a circuit?

    • It is important to ensure proper gate drive voltage and current to fully utilize the performance of NJVMJD50T4G and prevent damage due to overdriving or underdriving.

  8. What are the recommended mounting and heatsinking methods for NJVMJD50T4G?

    • Proper mounting techniques and adequate heatsinking are essential to maintain the temperature within safe limits and maximize the reliability of NJVMJD50T4G in technical solutions.

  9. Does NJVMJD50T4G have built-in protection features?

    • NJVMJD50T4G may include built-in protection against overcurrent, overvoltage, and thermal overload, but external circuitry may be required for comprehensive protection in some applications.

  10. Where can I find detailed technical specifications and application notes for NJVMJD50T4G?

    • Detailed technical specifications, application notes, and design resources for NJVMJD50T4G can be found on the manufacturer's website or through authorized distributors.