NM27C256V120

Product Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics: High-density, Electrically Erasable Programmable Read-Only Memory (EEPROM)
• Package: 28-pin DIP (Dual In-line Package)
• Essence: Stores data even when power is turned off
• Packaging/Quantity: Available in tubes of 25 or reels of 500 units

Specifications

• Memory Size: 256 kilobits (32 kilobytes)
• Organization: 32K x 8 bits
• Supply Voltage: 4.5V to 5.5V
• Access Time: 120 nanoseconds
• Operating Temperature: -40°C to +85°C
• Data Retention: 10 years minimum
• Endurance: 1,000,000 erase/write cycles

Pin Configuration

The NM27C256V120 has a total of 28 pins, each serving a specific function:

1. A16: Address Input
2. A15: Address Input
3. A12: Address Input
4. A7: Address Input
5. A6: Address Input
6. A5: Address Input
7. A4: Address Input
8. A3: Address Input
9. A2: Address Input
10. A1: Address Input
11. A0: Address Input
12. VPP: Programming Voltage Input
13. /OE: Output Enable Input
14. /CE: Chip Enable Input
15. D0: Data Input/Output
16. D1: Data Input/Output
17. D2: Data Input/Output
18. D3: Data Input/Output
19. D4: Data Input/Output
20. D5: Data Input/Output
21. D6: Data Input/Output
22. D7: Data Input/Output
23. VCC: Power Supply
24. /WE: Write Enable Input
25. GND: Ground
26. NC: No Connection
27. A8: Address Input
28. A9: Address Input

Functional Features

• High-density memory storage
• Electrically erasable and programmable
• Non-volatile data retention
• Fast access time for efficient data retrieval
• Low power consumption
• Reliable performance in extreme temperature conditions

Advantages and Disadvantages

Advantages

• Large memory capacity
• Easy to program and erase
• Retains data without power supply
• Suitable for a wide range of applications
• Durable and long-lasting

Disadvantages

• Relatively slower access time compared to some other memory technologies
• Limited endurance (1,000,000 erase/write cycles)

Working Principles

The NM27C256V120 is based on EEPROM technology, which allows for electrically erasing and reprogramming the memory cells. It utilizes a grid of transistors to store data as electrical charges. When a specific address is accessed, the corresponding memory cell is activated, allowing the stored data to be read or modified.

Detailed Application Field Plans

The NM27C256V120 can be used in various applications, including:

1. Embedded systems
2. Automotive electronics
3. Industrial control systems
4. Consumer electronics
5. Medical devices
6. Communication equipment

Detailed and Complete Alternative Models

1. AT28C256: Atmel 256K EEPROM
2. M27C256B: STMicroelectronics 256K EPROM
3. 27C256: Various manufacturers' 256K EPROM

These alternative models offer similar functionality and can be used as substitutes for the NM27C256V120 in compatible applications.

In conclusion, the NM27C256V120 is a high-density non-volatile memory IC with electrically erasable and programmable features. It offers reliable data storage and retrieval capabilities, making it suitable for a wide range of applications. While it has some limitations in terms of access time and endurance, it provides a cost-effective solution for many electronic systems.