NSVMMBT5551M3T5G
Introduction
The NSVMMBT5551M3T5G is a semiconductor product belonging to the category of bipolar transistors. This device is commonly used in electronic circuits for amplification and switching applications due to its unique characteristics. The NSVMMBT5551M3T5G is available in a specific package and quantity, making it suitable for various electronic projects.
Basic Information Overview
- Category: Bipolar Transistor
- Use: Amplification and Switching
- Characteristics: High gain, low noise, and fast switching speed
- Package: SOT-23
- Essence: Small signal NPN transistor
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Voltage - Collector Emitter Breakdown (Max): 160V
- Current - Collector (Ic) (Max): 600mA
- Power - Max: 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 100mA, 1V
- Transition Frequency: 150MHz
Detailed Pin Configuration
The NSVMMBT5551M3T5G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)
Functional Features
- High current gain
- Low noise
- Fast switching speed
- Suitable for low-power applications
Advantages and Disadvantages
Advantages
- High gain
- Low noise
- Small package size
Disadvantages
- Limited power handling capability
- Moderate frequency response
Working Principles
The NSVMMBT5551M3T5G operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a much larger current flowing between the collector and emitter terminals, allowing for amplification and switching functions.
Detailed Application Field Plans
The NSVMMBT5551M3T5G is widely used in the following applications: - Audio amplifiers - Signal processing circuits - Switching circuits - Oscillator circuits
Detailed and Complete Alternative Models
Some alternative models to the NSVMMBT5551M3T5G include: - 2N3904 - BC547 - 2SC945
In conclusion, the NSVMMBT5551M3T5G is a versatile bipolar transistor with high gain and fast switching speed, making it suitable for a wide range of electronic applications.
[Word Count: 345]
기술 솔루션에 NSVMMBT5551M3T5G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is NSVMMBT5551M3T5G?
- NSVMMBT5551M3T5G is a high-performance NPN bipolar junction transistor (BJT) designed for use in general-purpose amplifier and switching applications.
What are the key features of NSVMMBT5551M3T5G?
- The key features include a high current gain, low saturation voltage, and high transition frequency, making it suitable for various technical solutions.
In what technical solutions can NSVMMBT5551M3T5G be used?
- NSVMMBT5551M3T5G can be used in audio amplifiers, signal processing circuits, motor control, power management, and other general-purpose applications.
What is the maximum collector current of NSVMMBT5551M3T5G?
- The maximum collector current is 600mA, making it suitable for low to medium power applications.
What is the typical current gain of NSVMMBT5551M3T5G?
- The typical current gain is 100-300 at a collector current of 100mA, ensuring reliable amplification in various circuits.
Does NSVMMBT5551M3T5G have a low saturation voltage?
- Yes, NSVMMBT5551M3T5G is designed with a low saturation voltage, which is beneficial for minimizing power loss in switching applications.
Is NSVMMBT5551M3T5G suitable for high-frequency applications?
- Yes, NSVMMBT5551M3T5G has a high transition frequency, making it suitable for high-frequency amplification and switching.
What are the recommended operating conditions for NSVMMBT5551M3T5G?
- The recommended operating conditions include a maximum collector-emitter voltage of 160V and a continuous collector current of 600mA.
Can NSVMMBT5551M3T5G be used in automotive electronics?
- Yes, NSVMMBT5551M3T5G is suitable for automotive electronics due to its robust performance and reliability.
Where can I find detailed technical specifications for NSVMMBT5551M3T5G?
- Detailed technical specifications for NSVMMBT5551M3T5G can be found in the datasheet provided by the manufacturer or distributor.