NTB60N06T4G
Product Overview
Category
The NTB60N06T4G belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and switching circuits.
Characteristics
- High current handling capability
- Low on-resistance
- Fast switching speed
- Low gate drive power
Package
The NTB60N06T4G is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 60A
- RDS(ON) (Max) @ VGS = 10V: 9.5mΩ
- Gate-Source Voltage (VGS) ±20V
- Total Gate Charge (Qg): 40nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
The NTB60N06T4G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for minimal power dissipation
- High current handling capability for power applications
- Fast switching speed for efficient operation
- Robust construction for reliability in demanding environments
Advantages
- Efficient power management
- Reduced heat generation
- Suitable for high-current applications
- Fast response times
Disadvantages
- Higher cost compared to standard MOSFETs
- May require careful thermal management due to high power dissipation
Working Principles
The NTB60N06T4G operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow in various applications.
Detailed Application Field Plans
The NTB60N06T4G is widely used in the following applications: - Switching power supplies - Motor control - Battery management systems - LED lighting - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the NTB60N06T4G include: - IRF3205 - FDP8870 - STP80NF70
In conclusion, the NTB60N06T4G power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.
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What is the maximum drain-source voltage of NTB60N06T4G?
- The maximum drain-source voltage of NTB60N06T4G is 60V.
What is the continuous drain current rating of NTB60N06T4G?
- The continuous drain current rating of NTB60N06T4G is 60A.
What is the on-resistance of NTB60N06T4G?
- The on-resistance of NTB60N06T4G is typically 0.009 ohms.
What is the gate threshold voltage of NTB60N06T4G?
- The gate threshold voltage of NTB60N06T4G is typically 2.5V.
What are the typical applications for NTB60N06T4G?
- NTB60N06T4G is commonly used in power management, motor control, and DC-DC converter applications.
Is NTB60N06T4G suitable for automotive applications?
- Yes, NTB60N06T4G is designed to meet automotive quality and reliability standards, making it suitable for automotive applications.
What is the operating temperature range of NTB60N06T4G?
- NTB60N06T4G has an operating temperature range of -55°C to 175°C.
Does NTB60N06T4G have built-in ESD protection?
- Yes, NTB60N06T4G features built-in ESD protection, enhancing its robustness in various applications.
What package type does NTB60N06T4G come in?
- NTB60N06T4G is available in a D2PAK package, which offers high power dissipation capability.
Are there any recommended application circuits for NTB60N06T4G?
- Yes, the datasheet for NTB60N06T4G provides recommended application circuits and layout guidelines for optimal performance.