이미지는 예시일 수 있습니다.
제품 세부사항은 사양을 확인하세요.
NTD3055-150T4G

NTD3055-150T4G

Product Overview

Category

The NTD3055-150T4G belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The NTD3055-150T4G is typically available in a TO-252 package.

Essence

This MOSFET is essential for controlling high-power loads in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 12A
  • RDS(ON) (Max) @ VGS = 10V: 0.035Ω
  • Input Capacitance (Ciss) @ VDS = 25V: 1150pF
  • Power Dissipation (PD): 2.3W

Detailed Pin Configuration

The NTD3055-150T4G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power control applications.
  • Low input capacitance enables fast switching performance.
  • Low on-resistance minimizes power loss and heat generation.

Advantages

  • Suitable for high-frequency applications
  • Low power dissipation
  • Compact package size

Disadvantages

  • Limited maximum drain-source voltage compared to some other power MOSFETs
  • Sensitivity to static electricity

Working Principles

The NTD3055-150T4G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the NTD3055-150T4G include: - IRF3205 - FQP30N06L - IRL540

In conclusion, the NTD3055-150T4G power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of electronic applications. Its compact package and functional features make it a popular choice for designers seeking efficient power control solutions.

[Word count: 366]

기술 솔루션에 NTD3055-150T4G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage for NTD3055-150T4G?

    • The maximum drain-source voltage for NTD3055-150T4G is 60V.
  2. What is the continuous drain current rating of NTD3055-150T4G?

    • The continuous drain current rating of NTD3055-150T4G is 12A.
  3. What is the on-resistance (RDS(on)) of NTD3055-150T4G at a specific gate-source voltage?

    • The on-resistance (RDS(on)) of NTD3055-150T4G varies with gate-source voltage. At VGS = 10V, it is typically 0.035 ohms.
  4. Can NTD3055-150T4G be used in high-frequency switching applications?

    • Yes, NTD3055-150T4G can be used in high-frequency switching applications due to its low on-resistance and fast switching characteristics.
  5. What is the maximum junction temperature for NTD3055-150T4G?

    • The maximum junction temperature for NTD3055-150T4G is 175°C.
  6. Is NTD3055-150T4G suitable for automotive applications?

    • Yes, NTD3055-150T4G is suitable for automotive applications as it meets AEC-Q101 standards.
  7. Does NTD3055-150T4G have built-in ESD protection?

    • Yes, NTD3055-150T4G has built-in ESD protection, making it robust against electrostatic discharge events.
  8. What is the typical gate charge of NTD3055-150T4G?

    • The typical gate charge of NTD3055-150T4G is 18nC at VGS = 10V.
  9. Can NTD3055-150T4G be used in power management circuits?

    • Yes, NTD3055-150T4G is commonly used in power management circuits due to its high current handling capability and low on-resistance.
  10. What are some common thermal considerations when using NTD3055-150T4G in a technical solution?

    • Common thermal considerations include proper heat sinking, thermal vias, and ensuring adequate airflow to maintain the junction temperature within safe limits.